Compact dual transistor emitter ROHM UMG8NTR designed for inverter and interface driver applications
Key Attributes
Model Number:
UMG8NTR
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMG8NTR
Package:
SOT-353-5
Product Description
Product Overview
The EMG8 / UMG8N is a dual digital transistor emitter featuring two DTC143Z chips integrated within a single EMT or UMT package. This configuration significantly reduces mounting costs and board space. It is designed for applications such as inverters, interfaces, and drivers, offering efficient performance.
Product Attributes
- Brand: ROHM
- RoHS Compliant: Yes
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMG8 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G8 |
| UMG8N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G8 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | -5 | 30 | V | ||
| Output current | IO | 100 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation | PD*2*3 | EMG8 | 150 | mW/Total | ||
| Power dissipation | PD*2*3 | UMG8N | 150 | mW/Total | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage | VI(on) | VO = 0.3V, IO = 5mA | 1.3 | - | - | V |
| Output voltage | VO(on) | IO = 5mA, II = 250A | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 1.8 | mA |
| Output current | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 10mA | 80 | - | - | - |
| Input resistance | R1 | - | 3.29 | 6.11 | k | |
| Resistance ratio | R2/R1 | - | 8 | 12 | - | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
1808280111_ROHM-UMG8NTR_C126126.pdf
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