Low Frequency PNP Silicon Transistor ROHM 2SB1386T100R Featuring Low VCEsat and High DC Current Gain
Key Attributes
Model Number:
2SB1386T100R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
120MHz
Type:
PNP
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-
Mfr. Part #:
2SB1386T100R
Package:
SOT-89
Product Description
Product Overview
The 2SB1386 / 2SB1412 / 2SB1326 are PNP silicon transistors designed for low-frequency applications, offering low VCE(sat) of -0.35V (Typ.) and excellent DC current gain characteristics. They serve as complements to the 2SD2098 / 2SD2118 / 2SD2097 series.
Product Attributes
- Brand: ROHM
- Structure: Epitaxial planar type
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | 2SB1386 | 2SB1412 | 2SB1326 |
| Collector-base voltage | VCBO | -30 | V | ● | ● | ● | |||
| Collector-emitter voltage | VCEO | -20 | V | ● | ● | ● | |||
| Emitter-base voltage | VEBO | -6 | V | ● | ● | ● | |||
| Collector current (DC) | IC | -5 | A | ● | ● | ● | |||
| Collector current (Pulse) | IC(Pulse) | *1 Single pulse, Pw=10ms | -10 | A | ● | ● | ● | ||
| Collector power dissipation (Ta=25C) | PC | *3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. | 1 | W | ● | ● | ● | ||
| Collector power dissipation (Tc=25C) | PC | *2 When mounted on a 40400.7 mm ceramic board. | 10 | W | ● | ● | ● | ||
| Junction temperature | Tj | 150 | C | ● | ● | ● | |||
| Storage temperature | Tstg | -55 | 150 | C | ● | ● | ● | ||
| Collector-base breakdown voltage | BVCBO | IC= -50A | -30 | V | ● | ● | ● | ||
| Collector-emitter breakdown voltage | BVCEO | IC= -1mA | -20 | V | ● | ● | ● | ||
| Emitter-base breakdown voltage | BVEBO | IE= -50A | -6 | V | ● | ● | ● | ||
| Collector cutoff current | ICBO | VCB= -20V | -0.5 | A | ● | ● | ● | ||
| Emitter cutoff current | IEBO | VEB= -5V | -0.5 | A | ● | ● | ● | ||
| DC current transfer ratio | hFE | VCE= -2V, IC= -0.5A | 82 | 390 | ● | ● | ● | ||
| DC current transfer ratio | hFE | VCE= -2V, IC= -0.5A | 120 | 390 | |||||
| DC current transfer ratio | hFE | VCE= -2V, IC= -0.5A | 180 | 390 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC/IB= -4A / -0.1A | -0.35 | V | ● | ● | ● | ||
| Transition frequency | fT | VCE= -6V, IE=50mA, f=100MHz | 60 | MHz | ● | ● | ● | ||
| Output capacitance | Cob | VCB= -20V, IE=0A, f=1MHz | - | 120 | pF | ● | ● | ● |
1811031203_ROHM-2SB1386T100R_C308643.pdf
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