Built in Bias Resistor NPN Digital Transistor ROHM DTC014EMT2L for Inverter and Interface Applications
Key Attributes
Model Number:
DTC014EMT2L
Product Custom Attributes
Output Voltage(VO(on)):
150mV@5mA,0.5mA
Input Resistor:
10kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC014EMT2L
Package:
SOT-723
Product Description
Product Overview
The ROHM DTC014E series is a line of NPN digital transistors featuring built-in biasing resistors (R1 = R2 = 10k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations with straightforward on/off condition settings. These transistors are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA014E series.
Product Attributes
- Brand: ROHM
- Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTC014EM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 40 |
| DTC014EEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 40 |
| DTC014EUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 40 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | VCC | 50 | V | |
| VIN | 40 to -10 | V | ||
| IO | 50 | mA | ||
| IC(MAX)*1 | 100 | mA | ||
| PD (DTC014EM) | *2 | 150 | mW | |
| PD (DTC014EEB) | *2 | 150 | mW | |
| PD (DTC014EUB) | *2 | 200 | mW | |
| Tj | 150 | |||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics | VI(off) | VCC = 5V, IO = 100A | - 0.8 | V |
| VI(on) | VO = 0.3V, IO = 5mA | 2.6 - - | V | |
| VO(on) | IO = 5mA, II = 0.5mA | - 50 150 | mV | |
| II | VI = 5V | - - 880 | A | |
| IO(off) | VCC = 50V, VI = 0V | - - 500 | nA | |
| GI | VO = 10V, IO = 5mA | 35 - - | - | |
| R1 | 7 10 13 | k | ||
| R2/R1 | 0.8 1.0 1.2 | - | ||
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - 250 - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
2211141030_ROHM-DTC014EMT2L_C2994793.pdf
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