Integrated Bias Resistor Digital Transistor ROHM UMD9NTR for Inverter and Driver Circuit Applications

Key Attributes
Model Number: UMD9NTR
Product Custom Attributes
DC Current Gain:
68@5mA,5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
100mV
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Number:
1 PNP Pre-Biased Transistor, 1 NPN
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD9NTR
Package:
SOT-363
Product Description

Product Overview

The ROHM EMD9 / UMD9N / IMD9A are NPN + PNP Complex Digital Transistors featuring built-in bias resistors. These transistors simplify circuit design by eliminating the need for external input resistors, enabling easy configuration of inverter circuits. The integrated thin-film bias resistors offer complete isolation for negative input biasing and eliminate parasitic effects. They are ideal for inverter, interface, and driver circuit applications.

Product Attributes

  • Brand: ROHM
  • Type: NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
  • Certifications: Lead Free/RoHS Compliant

Technical Specifications

Part No. Package Package size (mm) Taping code Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Marking
EMD9 EMT6 (SC-107C) 1616 T2R 180 8 3,000 D9
UMD9N UMT6 (SC-74) 2021 TR 180 8 3,000 D9
IMD9A SMT6 (SC-88) 2928 T108 180 8 8,000 D9
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C)
Supply voltage VCC DTr1(NPN) - - 50 V
Supply voltage VCC DTr2(PNP) - - -50 V
Input voltage VIN - -40 - +40 V
Collector current IC(MAX.) *1 - 100 / -100 - mA
Output current IO - -70 - 70 mA
Power dissipation PD EMD9 / UMD9N *2 - 150 (Total)*3 - mW
Power dissipation PD IMD9A *2 - 300 (Total)*4 - mW
Junction temperature Tj - - - 150 C
Range of storage temperature Tstg - -55 - +150 C
Electrical Characteristics (Ta = 25C)
Output current IO(off) VCC = -50V, VI = 0V - - -0.1 mA
DC current gain GI VO = -5V, IO = -5mA - 250 - -
Input resistance R1 VO = -0.3V, IO = -1mA - - -0.88 k
Resistance ratio R2/R1 - - 68 - -
Transition frequency fT *1 VCE = -10V, IE = 5mA, f = 100MHz - - 250 MHz
Input voltage VI(on) VO = -0.3V, IO = -1mA - -0.5 - V
Output voltage VO(on) IO / II = -5mA / -0.25mA - -0.3 - V
Input current II VI = -5V - - -0.1 A
Input voltage VI(off) VCC = -5V, IO = -100A - -1.4 - V
Output current IO(off) VCC = 50V, VI = 0V - - 0.1 mA
DC current gain GI VO = 5V, IO = 5mA - 250 - -
Input resistance R1 VO = 0.3V, IO = 1mA - - 0.88 k
Resistance ratio R2/R1 - - 68 - -
Transition frequency fT *1 VCE = 10V, IE = -5mA, f = 100MHz - - 250 MHz
Input voltage VI(on) VO = 0.3V, IO = 1mA - 0.5 - V
Output voltage VO(on) IO / II = 5mA / 0.25mA - 0.3 - V
Input current II VI = 5V - - 0.1 A
Input voltage VI(off) VCC = 5V, IO = 100A - 1.4 - V

Dimensions (Unit : mm)

EMT6

Dimension MIN MAX MIN (INCHES) MAX (INCHES)
A0.450.550.0180.022
A10.000.100.0000.004
b0.170.270.0070.011
c0.080.180.0030.007
D1.501.700.0590.067
E1.101.300.0430.051
e1.25-0.049-
HE1.501.700.0590.067
L0.100.300.0040.012
Lp-0.35-0.014
x-0.10-0.004
y-0.10-0.004
b2-0.37-0.015
e1-0.45-0.018
l10.50-0.020-

UMT6

Dimension MIN MAX MIN (INCHES) MAX (INCHES)
A0.801.000.0310.039
A10.000.100.0000.004
A30.25-0.010-
b0.150.300.0060.012
c0.100.200.0040.008
D1.902.100.0750.083
E1.151.350.0450.053
e1.55-0.061-
HE2.002.200.0790.087
L10.200.500.0080.020
Lp0.250.550.0100.022
Q0.100.300.0040.012
x-0.10-0.004
y-0.10-0.004
b2-0.40-0.016
e1-0.65-0.026
l10.25-0.010-

SMT6

Dimension MIN MAX MIN (INCHES) MAX (INCHES)
A1.001.300.0390.051
A10.000.100.0000.004
A30.25-0.010-
b0.250.400.0100.016
c0.090.250.0040.010
D2.803.000.1100.118
E1.501.800.0590.071
e2.10-0.083-
HE2.603.000.1020.118
L10.300.600.0120.024
Lp0.400.700.0160.028
Q0.200.300.0080.012
x-0.20-0.008
y-0.10-0.004
b20.60-0.024-
e1-0.95-0.037
l1-0.90-0.035

2303170930_ROHM-UMD9NTR_C5372151.pdf

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