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quality NPN Digital Transistor ROHM DTC023EUBTL Featuring Integrated Bias Resistors for Simplified Circuit Design factory
quality NPN Digital Transistor ROHM DTC023EUBTL Featuring Integrated Bias Resistors for Simplified Circuit Design factory

NPN Digital Transistor ROHM DTC023EUBTL Featuring Integrated Bias Resistors for Simplified Circuit Design

Key Attributes
Model Number: DTC023EUBTL
Product Custom Attributes
DC Current Gain:
20@20mA,10V
Operating Temperature:
-40℃~+150℃
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
200mV@10mA,1mA
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Number:
-
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC023EUBTL
Package:
SOT-323FL
Product Description

Product Overview

The DTC023E series is a line of NPN digital transistors featuring built-in biasing resistors (R1 = R2 = 2.2k). This integrated design simplifies circuit configuration, enabling the creation of inverter circuits without the need for external input resistors. Designed for ease of use, these transistors only require the setting of on/off conditions for operation, making circuit design straightforward. They are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA023E series.

Product Attributes

  • Brand: ROHM
  • Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
  • Built-in Resistors: R1 = R2 = 2.2k

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTC023EM SOT-723 (VMT3) 1212 T2L 180 8 8000 65
DTC023EEB SOT-416FL (EMT3F) 1616 TL 180 8 3000 65
DTC023EUB SOT-323FL (UMT3F) 2021 TL 180 8 3000 65
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C)
Supply voltage VCC 50 V
Input voltage VIN -10 12 V
Output current IO 100 mA
Collector current IC(MAX)*1 100 mA
Power dissipation PD*2 DTC023EM 150 mW
Power dissipation PD*2 DTC023EEB 150 mW
Power dissipation PD*2 DTC023EUB 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C)
Input voltage (OFF) VI(off) VCC = 5V, IO = 100A - - 0.8 V
Input voltage (ON) VI(on) VO = 0.3V, IO = 5mA 2.6 - - V
Output voltage (ON) VO(on) IO = 10mA, II = 1mA - 80 200 mV
Input current II VI = 5V - - 3.6 mA
Output current (OFF) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 10V, IO = 20mA 20 - - -
Input resistance R1 - 1.54 2.86 k
Resistance ratio R2/R1 - 0.8 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.


2211141030_ROHM-DTC023EUBTL_C5252699.pdf

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