Built In Bias Resistor NPN Digital Transistor ROHM DTC014TUBTL for Inverter Interface and Driver Circuits
Key Attributes
Model Number:
DTC014TUBTL
Product Custom Attributes
Current - Collector Cutoff:
500nA
DC Current Gain:
100@5mA,10V
Emitter-Base Voltage VEBO:
5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Type:
NPN
Transition Frequency(fT):
250MHz
Input Resistor:
10kΩ
Vce Saturation(VCE(sat)):
150mV@500uA,5mA
Number:
-
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC014TUBTL
Package:
SOT-323FL
Product Description
Product Overview
The DTC014T series is a range of NPN digital transistors featuring built-in bias resistors (R1 = 10k), simplifying inverter circuit configurations without external components. These transistors are designed for easy circuit design, requiring only the setting of on/off conditions for operation. They are ideal for inverter, interface, and driver applications.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTC014TM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 10 |
| DTC014TEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 10 |
| DTC014TUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 10 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC*1 | 100 | mA | |||
| Power dissipation | PD*2 | DTC014TM | 150 | mW | ||
| DTC014TEB | 150 | mW | ||||
| DTC014TUB | 200 | mW | ||||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.5mA | - | 50 | 150 | mV |
| DC current gain | hFE | VCE = 10V, IC = 5mA | 100 | - | 600 | - |
| Input resistance | R1 | - | 7 | 13 | k | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
2209051730_ROHM-DTC014TUBTL_C5157658.pdf
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