N Channel Power MOSFET Shenzhen ruichips Semicon RU7080S R with 75A Diode Continuous Forward Current
Key Attributes
Model Number:
RU7080S-R
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-channel
Output Capacitance(Coss):
380pF
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
RU7080S-R
Package:
TO-263
Product Description
Product Overview
The RU7080S is an N-Channel Advanced Power MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching speeds, and a high operating temperature of 175C, making it suitable for demanding environments. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: Shenzhen City
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 70 | V | |||
| VGSS | Gate-Source Voltage | ±25 | V | |||
| TJ | Maximum Junction Temperature | 175 | °C | |||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| IS | Diode Continuous Forward Current | TC=25°C | 75 | A | ||
| IDP | Pulse Drain Current | Ø300µs Pulse, Tested TC=25°C | 300 | A | ||
| ID | Continuous Drain Current | VGS=10V, TC=25°C | 80 | A | ||
| ID | Continuous Drain Current | VGS=10V, TC=100°C | 56 | A | ||
| PD | Maximum Power Dissipation | TC=25°C | 111 | W | ||
| PD | Maximum Power Dissipation | TC=100°C | 55 | W | ||
| RθJC | Thermal Resistance-Junction to Case | 1.35 | °C/W | |||
| RθJA | Thermal Resistance-Junction to Ambient | 62.5 | °C/W | |||
| EAS | Avalanche Energy, Single Pulsed | Ø156 mJ | 156 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 70 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=70V, VGS=0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=125°C | 30 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 2 | 4 | V | |
| IGSS | Gate Leakage Current | VGS=±25V, VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=40A | 7 | 9 | mΩ | |
| VSD | Diode Forward Voltage | ISD=75A, VGS=0V | 1.2 | V | ||
| trr | Reverse Recovery Time | ISD=75A, dlSD/dt=100A/µs | 106 | ns | ||
| Qrr | Reverse Recovery Charge | 56 | nC | |||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.2 | Ω | ||
| Ciss | Input Capacitance | VGS=0V, VDS=30V, Frequency=1.0MHz | 1800 | pF | ||
| Coss | Output Capacitance | 380 | pF | |||
| Crss | Reverse Transfer Capacitance | 105 | pF | |||
| td(ON) | Turn-on Delay Time | VDD=30V,IDS=75A, VGEN=10V,RG=4.7Ω | 15 | ns | ||
| tr | Turn-on Rise Time | 94 | ns | |||
| td(OFF) | Turn-off Delay Time | 46 | ns | |||
| tf | Turn-off Fall Time | 32 | ns | |||
| Qg | Total Gate Charge | VDS=56V, VGS=10V, IDS=75A | 50 | nC | ||
| Qgs | Gate-Source Charge | 12 | nC | |||
| Qgd | Gate-Drain Charge | 19 | nC | |||
2410122027_Shenzhen-ruichips-Semicon-RU7080S-R_C2803369.pdf
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