Silicon Carbide Diode Reasunos RSS10065A Featuring Zero Forward Recovery Voltage and Low Switching Losses
Key Attributes
Model Number:
RSS10065A
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.37V@10A
Current - Rectified:
32A
Mfr. Part #:
RSS10065A
Package:
TO-220-2
Product Description
Reasunos RSS10065A Silicon Carbide Schottky Diode
The Reasunos RSS10065A is a Silicon Carbide Schottky Diode designed for high-performance power applications. It offers zero reverse recovery current and zero forward recovery voltage, leading to significantly reduced switching losses. This unipolar device boasts a positive temperature coefficient on VF and temperature-independent switching, making it ideal for demanding environments up to 175C. Its benefits include the ability to replace bipolar devices, reduction in heatsink size, and parallel operation without thermal runaway.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Part Number: RSS10065A
- Package: TO-220-2
- Marking: RSS10065A
- Packing: Tube (50 PCS)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | TC = 25 |
| Surge Peak Reverse Voltage | VRSM | 650 | V | TC = 25 |
| DC Blocking Voltage | VR | 650 | V | TC = 25 |
| Forward Current | IF | 32 | A | TC 25 |
| 15 | A | TC 135 | ||
| 10 | A | TC 154 | ||
| Non-Repetitive Forward Surge Current | IFSM | 96 | A | TC = 25, tp = 10ms, Half Sine Wave |
| 83 | A | TC = 110, tp = 10ms, Half Sine Wave | ||
| Repetitive Peak Forward Surge Current | IFRM | 85 | A | TC = 25, tp = 10ms, Half Sine Wave |
| Power Dissipation | Ptot | 127 | W | TC = 25 |
| Maximum Case Temperature | TC | 154 | ||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 to 175 | ||
| Forward Voltage | VF | 1.37 (Typ.) | V | IF = 10A, TJ = 25 |
| 1.6 (Max.) | V | IF = 10A, TJ = 175 | ||
| Reverse Current | IR | 5 (Typ.) | A | VR = 650V, TJ = 25 |
| 60 (Max.) | A | VR = 650V, TJ = 175 | ||
| Total Capacitance | C | 57 (Typ.) | pF | VR = 200V, TJ = 25, f = 1MHz |
| Total Capacitive Charge | QC | 30 | nC | VR =400V |
| Capacitance Stored Energy | Ec | 4.8 | uJ | VR =400V |
| Thermal Resistance from Junction to Case | RJC | 1.175 | /W |
Applications
- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drive
- PV Inverter
- Wind Power Station
2306121020_REASUNOS-RSS10065A_C5371981.pdf
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