SOT363 package dual digital transistor ROHM UMB11NFHATN featuring two independent DTA114E elements for driver and inverter
Key Attributes
Model Number:
UMB11NFHATN
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
13kΩ
Resistor Ratio:
1
Number:
2 PNP Pre-Biased Transistors
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMB11NFHATN
Package:
SOT-363
Product Description
Product Overview
The UMB11N FHA is a general-purpose dual digital transistor housed in a SOT-363 (UMT6) package. It features two independent DTA114E transistor elements, ensuring no interference between them. This configuration allows for reduced mounting costs and area, making it compatible with UMT3 automatic mounting machines. The UMB11N FHA is AEC-Q101 qualified and is suitable for applications such as inverters, interfaces, and drivers.
Product Attributes
- Brand: ROHM
- Qualification: AEC-Q101
- Package Type: SOT-363 (UMT6)
- Internal Circuit: Two DTA114E chips
Technical Specifications
| Parameter | Symbol | Conditions | Values | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Supply voltage | VCC | -50 | V | |
| Input voltage | VIN | -40 to 10 | V | |
| Output current | IO | -50 | mA | |
| Collector current | IC(MAX)*1 | -100 | mA | |
| Power dissipation | PD*2*3 | 150 | mW/TOTAL | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Input voltage | VI(off) | VCC = -5V, IO = -100A | - | V |
| Input voltage | VI(on) | VO = -0.3V, IO = -10mA | -3 | V |
| Output voltage | VO(on) | IO = -10mA, II = -0.5mA | -100 to -300 | mV |
| Input current | II | VI = -5V | -880 | A |
| Output current | IO(off) | VCC = -50V, VI = 0V | -500 | nA |
| DC current gain | GI | VO = -5V, IO = -5mA | 30 | - |
| Input resistance | R1 | 7 to 13 | k | |
| Resistance ratio | R2/R1 | 0.8 to 1.2 | - | |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | 250 | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
2210111600_ROHM-UMB11NFHATN_C3588649.pdf
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