Silicon Carbide Schottky Diode REASUNOS RSS20065A for Power Conversion in Wind Power and SMPS Systems
Key Attributes
Model Number:
RSS20065A
Product Custom Attributes
Reverse Leakage Current (Ir):
6uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.35V@20A
Current - Rectified:
62A
Mfr. Part #:
RSS20065A
Package:
TO-220-2
Product Description
Product Overview
The RSS20065A is a Silicon Carbide Schottky Diode designed for high-performance power applications. It features zero reverse recovery current and zero forward recovery voltage, along with a positive temperature coefficient on VF and temperature-independent switching. This unipolar device offers a 175C operating junction temperature, enabling reduction in heatsink size and parallel operation without thermal runaway. Key applications include Switch Mode Power Supplies, Power Factor Correction, and Motor drives, PV Inverters, and Wind Power Stations.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Product Code: RSS20065A
- Package: TO-220-2
- Marking: RSS20065A
- Packing: Tube (50 PCS)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | TC = 25 | |
| Surge Peak Reverse Voltage | VRSM | 650 | V | TC = 25 | |
| DC Blocking Voltage | VR | 650 | V | TC = 25 | |
| Forward Current | IF | 62 | A | TC 25 | |
| 29 | TC 135 | ||||
| 20 | TC 154 | Fig. 3 | |||
| Non-Repetitive Forward Surge Current | IFSM | 172 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| 156 | TC = 110, tp = 10ms, Half Sine Wave | ||||
| Repetitive Peak Forward Surge Current | IFRM | 164 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| Power Dissipation | Ptot | 258 | W | TC = 25 | Fig. 4 |
| Maximum Case Temperature | TC | 154 | |||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 to 175 | |||
| Forward Voltage | VF | 1.35 (Typ.), 1.7 (Max.) | V | IF = 20A, TJ = 25 | Fig.1 |
| 1.6 | IF = 20A, TJ = 175 | ||||
| Reverse Current | IR | 6 (Typ.), 15 (Max.) | A | VR = 650V, TJ = 25 | Fig.2 |
| 100 | VR = 650V, TJ = 175 | ||||
| Total Capacitance | C | 906 | pF | VR = 1V, TJ = 25, f = 1MHz | Fig.5 |
| 122 | VR = 200V, TJ = 25, f = 1MHz | ||||
| 118 | VR = 400V, TJ = 25, f = 1MHz | ||||
| Total Capacitive Charge | QC | 62 | nC | VR =400V | Fig.6 |
| Capacitance Stored Energy | Ec | 10 | uJ | VR =400V | Fig.7 |
| Thermal Resistance from Junction to Case | RJC | 0.58 | /W | Fig.8 |
2411272001_REASUNOS-RSS20065A_C7465281.pdf
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