Shenzhen ruichips Semicon RU30C8H complementary N channel and P channel power MOSFET for load switch
Key Attributes
Model Number:
RU30C8H
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
RU30C8H
Package:
SOP-8
Product Description
Product Overview
The RU30C8H is a complementary advanced power MOSFET featuring N-Channel and P-Channel devices. It offers reliable and rugged performance with ESD protection, making it suitable for load switch applications. Available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Unit | N-Channel Test Condition | P-Channel Test Condition | Min. | Typ. | Max. |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | V | VDSS=30V, VGS=0V | VDSS=-30V, VGS=0V | 30 | -30 | |
| Gate-Source Voltage | V | VGS=12V | VGS=12V | 12 | 12 | |
| Maximum Junction Temperature | C | TJ=150C | TJ=150C | 150 | ||
| Storage Temperature Range | C | TSTG=-55 to 150C | TSTG=-55 to 150C | -55 | 150 | |
| Diode Continuous Forward Current | A | IS TA=25C | IS TA=25C | 2.7 | -2.5 | |
| Pulsed Drain Current | A | IDP TA=25C | IDP TA=25C | 32 | -28 | |
| Continuous Drain Current | A | ID TA=25C (VGS=10V) | ID TA=25C (VGS=-10V) | 8 | -7 | |
| Continuous Drain Current | A | ID TA=70C (VGS=10V) | ID TA=70C (VGS=-10V) | 6.5 | -5.6 | |
| Maximum Power Dissipation | W | PD Mounted on Large Heat Sink TA=25C | PD Mounted on Large Heat Sink TA=25C | 2 | -2 | |
| Maximum Power Dissipation | W | PD Mounted on Large Heat Sink TA=70C | PD Mounted on Large Heat Sink TA=70C | 1.3 | -1.3 | |
| Thermal Resistance | ||||||
| Thermal Resistance-Junction to Case | C/W | RJC | RJC | TBD | ||
| Thermal Resistance-Junction to Ambient | C/W | RJA (Mounted on 1 inch square copper board, t10sec) | RJA (Mounted on 1 inch square copper board, t10sec) | 62.5 | ||
| Avalanche Ratings | ||||||
| Avalanche Energy, Single Pulsed | mJ | EAS | EAS | TBD | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V | BVDSS VGS=0V, IDS=250A | BVDSS VGS=0V, IDS=-250A | 30 | -30 | |
| Zero Gate Voltage Drain Current | A | IDSS VDS=30V, VGS=0V | IDSS VDS=-30V, VGS=0V | 1.2 | 1.8 | 2.4 |
| Zero Gate Voltage Drain Current | A | IDSS VDS=30V, VGS=0V TJ=125C | IDSS VDS=-30V, VGS=0V TJ=125C | -1.2 | -1.8 | -2.4 |
| Gate Leakage Current | A | IGSS VGS=12V, VDS=0V | IGSS VGS=12V, VDS=0V | 10 | ||
| Gate Threshold Voltage | V | VGS(th) VDS=VGS, IDS=250A | VGS(th) VDS=VGS, IDS=-250A | 1.2 | 2.4 | |
| Gate Threshold Voltage | V | VGS(th) VDS=VGS, IDS=250A | VGS(th) VDS=VGS, IDS=-250A | -1.2 | -2.4 | |
| Electrical Characteristics | ||||||
| Drain-Source On-state Resistance | m | RDS(ON) VGS=10V, IDS=8A | RDS(ON) VGS=-10V, IDS=-7A | 12 | 15 | |
| Drain-Source On-state Resistance | m | RDS(ON) VGS=4.5V, IDS=7A | RDS(ON) VGS=-4.5V, IDS=-5A | 16 | 25 | |
| Drain-Source On-state Resistance | m | RDS(ON) VGS=10V, IDS=8A TJ=125C | RDS(ON) VGS=-10V, IDS=-7A TJ=125C | 340 | ||
| Drain-Source On-state Resistance | m | RDS(ON) VGS=4.5V, IDS=7A TJ=125C | RDS(ON) VGS=-4.5V, IDS=-5A TJ=125C | 780 | ||
| Diode Forward Voltage | V | VSD ISD=8A, VGS=0V | VSD ISD=-7A, VGS=0V | 1.2 | ||
| Diode Forward Voltage | V | VSD ISD=1A, VGS=0V | VSD ISD=-1A, VGS=0V | 1.8 | ||
| Diode Characteristics | ||||||
| Reverse Recovery Time | ns | trr ISD=8A, dlSD/dt=100A/s | trr ISD=-7A, dlSD/dt=100A/s | 15 | 21 | |
| Reverse Recovery Charge | nC | Qrr ISD=8A, dlSD/dt=100A/s | Qrr ISD=-7A, dlSD/dt=100A/s | 4 | 7 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | pF | Ciss VGS=0V, VDS=15V, Frequency=1.0MHz | Ciss VGS=0V, VDS=-15V, Frequency=1.0MHz | 340 | ||
| Output Capacitance | pF | Coss VGS=0V, VDS=15V, Frequency=1.0MHz | Coss VGS=0V, VDS=-15V, Frequency=1.0MHz | 75 | ||
| Reverse Transfer Capacitance | pF | Crss VGS=0V, VDS=15V, Frequency=1.0MHz | Crss VGS=0V, VDS=-15V, Frequency=1.0MHz | 50 | ||
| Turn-on Delay Time | ns | td(ON) VDD=15V, IDS=8A, VGEN=10V, RG=6 | td(ON) VDD=-15V, IDS=-7A, VGEN=-10V, RG=6 | 1.2 | ||
| Turn-on Rise Time | ns | tr VDD=15V, IDS=8A, VGEN=10V, RG=6 | tr VDD=-15V, IDS=-7A, VGEN=-10V, RG=6 | 12 | ||
| Turn-off Delay Time | ns | td(OFF) VDD=15V, IDS=8A, VGEN=10V, RG=6 | td(OFF) VDD=-15V, IDS=-7A, VGEN=-10V, RG=6 | 3 | ||
| Turn-off Fall Time | ns | tf VDD=15V, IDS=8A, VGEN=10V, RG=6 | tf VDD=-15V, IDS=-7A, VGEN=-10V, RG=6 | 1.8 | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | nC | Qg VDS=24V, IDS=8A, VGS=10V | Qg VDS=-24V, IDS=-7A, VGS=-10V | 340 | ||
| Gate-Source Charge | nC | Qgs VDS=24V, IDS=8A, VGS=10V | Qgs VDS=-24V, IDS=-7A, VGS=-10V | 75 | ||
| Gate-Drain Charge | nC | Qgd VDS=24V, IDS=8A, VGS=10V | Qgd VDS=-24V, IDS=-7A, VGS=-10V | 155 | ||
2410122025_Shenzhen-ruichips-Semicon-RU30C8H_C181433.pdf
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