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quality Power Switching MOSFET RENESAS 2SK1317-E with 1500V Drain to Source Voltage and High Speed Switching factory
quality Power Switching MOSFET RENESAS 2SK1317-E with 1500V Drain to Source Voltage and High Speed Switching factory

Power Switching MOSFET RENESAS 2SK1317-E with 1500V Drain to Source Voltage and High Speed Switching

Key Attributes
Model Number: 2SK1317-E
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12Ω@2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
100W
Mfr. Part #:
2SK1317-E
Package:
TO-3P
Product Description

Product Overview

The 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V, low drive current, and no secondary breakdown, making it suitable for switching regulators, DC-DC converters, and motor drivers.

Product Attributes

  • Brand: RENESAS
  • Package Code: PRSS0004ZE-A
  • Package Name: TO-3P

Technical Specifications

ItemSymbolRatingsUnitTest conditions
Drain to source voltageVDSS1500V
Gate to source voltageVGSS±20V
Drain currentID2.5A
Drain peak currentID(pulse)7APW ≤ 10 µs, duty cycle ≤ 1%
Body to drain diode reverse drain currentIDR2.5A
Channel dissipationPch*2100WValue at TC = 25°C
Channel temperatureTch150°C
Storage temperatureTstg–55 to +150°C
Drain to source breakdown voltageV(BR)DSS1500VID = 10 mA, VGS = 0
Gate to source leak currentIGSS±1µAVGS = ±20 V, VDS = 0
Zero gate voltage drain currentIDSS500µAVDS = 1200 V, VGS = 0
Gate to source cutoff voltageVGS(off)2.0 to 4.0VID = 1 mA, VDS = 10 V
Static drain to source on state resistanceRDS(on)9 to 12ΩID = 2 A, VGS = 15 V *3
Forward transfer admittance|yfs|0.45 to 0.75SID = 1 A, VDS = 20 V *3
Input capacitanceCiss990pFVDS = 10 V, VGS = 0, f = 1 MHz
Output capacitanceCoss125pFVDS = 10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitanceCrss60pFVDS = 10 V, VGS = 0, f = 1 MHz
Turn-on delay timetd(on)17nsID = 2 A, VGS = 10 V, RL = 15 Ω
Rise timetr70nsID = 2 A, VGS = 10 V, RL = 15 Ω
Turn-off delay timetd(off)110nsID = 2 A, VGS = 10 V, RL = 15 Ω
Fall timetf60nsID = 2 A, VGS = 10 V, RL = 15 Ω
Body to drain diode forward voltageVDF0.9VIF = 2 A, VGS = 0
Body to drain diode reverse recovery timetrr1750nsIF = 2 A, VGS = 0, diF/dt = 100 A/µs *3

1806090823_RENESAS-2SK1317-E_C68633.pdf

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