Low On State Resistance P channel Power MOS FET RENESAS NP36P04SDG E1 AY with AEC Q101 Qualification
Key Attributes
Model Number:
NP36P04SDG-E1-AY
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
36A
RDS(on):
23.5mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Output Capacitance(Coss):
450pF
Pd - Power Dissipation:
56W
Input Capacitance(Ciss):
2.8nF@10V
Gate Charge(Qg):
55nC
Mfr. Part #:
NP36P04SDG-E1-AY
Package:
TO-252(MP-3ZK)
Product Description
Product Overview
This P-channel Power MOS FET is designed for high current switching applications, offering super low on-state resistance and low input capacitance. It is specifically designed for automotive applications and is AEC-Q101 qualified. The product is Pb-free, meaning it does not contain lead in its external electrodes.
Product Attributes
- Brand: Renesas Electronics (implied by copyright and notice)
- Certifications: AEC-Q101 qualified
- Material: Pb-free (external electrode)
- Application: Automotive
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Drain to Source Voltage (VGS = 0 V) | VDSS | -40 | V | |||
| Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V | |||
| Drain Current (DC) (Tc = 25 °C) | ID(DC) | ±36 | A | |||
| Drain Current (pulse) | ID(pulse) | ±108 | A | Notes1 | ||
| Total Power Dissipation (Tc = 25 °C) | PT1 | 56 | W | |||
| Total Power Dissipation (Ta = 25 °C) | PT2 | 1.2 | W | |||
| Channel Temperature | Tch | 175 | °C | |||
| Storage Temperature | Tstg | -55 | 175 | °C | ||
| Single Avalanche Current | IAS | 26 | A | Notes2 | ||
| Single Avalanche Energy | EAS | 67 | mJ | Notes2 | ||
| Channel to Case Thermal Resistance | Rth(ch-c) | 2.68 | °C/W | Notes3 | ||
| Channel to Ambient Thermal Resistance | Rth(ch-a) | 125 | °C/W | Notes3 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | μA | VDS = -40 V, VGS = 0 V | ||
| Gate Leakage Current | IGSS | ±100 | nA | VGS = ±20 V, VDS = 0 V | ||
| Gate to Source Threshold Voltage | VGS(th) | -1.0 | -1.6 | -2.5 | V | VDS = VGS, ID = -250μA |
| Forward Transfer Admittance | | yfs | | 12 | 23 | S | VDS = -10 V, ID = -18 A (Notes4) | |
| Drain to Source On-state Resistance | RDS(on)1 | 12.5 | 17.0 | mΩ | VGS = -10 V, ID = -18 A (Notes4) | |
| Drain to Source On-state Resistance | RDS(on)2 | 15.4 | 23.5 | mΩ | VGS = -4.5 V, ID = -18 A (Notes4) | |
| Input Capacitance | Ciss | 2800 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 450 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 280 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Turn-on Delay Time | td(on) | 8 | ns | VDD = -20 V, ID = -18 A, VGS = -10 V, RG = 0 Ω | ||
| Rise Time | tr | 10 | ns | VDD = -20 V, ID = -18 A, VGS = -10 V, RG = 0 Ω | ||
| Turn-off Delay Time | td(off) | 250 | ns | VDD = -20 V, ID = -18 A, VGS = -10 V, RG = 0 Ω | ||
| Fall Time | tf | 140 | ns | VDD = -20 V, ID = -18 A, VGS = -10 V, RG = 0 Ω | ||
| Total Gate Charge | Qg | 55 | nC | VDD = -32 V, VGS = -10 V, ID = -36 A | ||
| Gate to Source Charge | Qgs | 7 | nC | VDD = -32 V, VGS = -10 V, ID = -36 A | ||
| Gate to Drain Charge | Qgd | 15 | nC | VDD = -32 V, VGS = -10 V, ID = -36 A | ||
| Body Diode Forward Voltage | VF(S-D) | 0.95 | 1.5 | V | IF = -36 A, VGS = 0 V (Notes4) | |
| Reverse Recovery Time | trr | 44 | ns | IF = -36 A, VGS = 0 V, di/dt = -100 A/μs | ||
| Reverse Recovery Charge | Qrr | 51 | nC | IF = -36 A, VGS = 0 V, di/dt = -100 A/μs |
2404031108_RENESAS-NP36P04SDG-E1-AY_C3281261.pdf
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