Silicon N Channel Power MOSFET RENESAS RJK0652DPB-00 J5 60V 35A for High Speed Switching Applications
Key Attributes
Model Number:
RJK0652DPB-00#J5
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V,17.5A
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.1nF@10V
Pd - Power Dissipation:
55W
Gate Charge(Qg):
29nC@4.5V
Mfr. Part #:
RJK0652DPB-00#J5
Package:
SC-100(SOT-669)
Product Description
Product Overview
The RJK0652DPB is a 60V, 35A Silicon N Channel Power MOS FET designed for high-speed switching applications. It features low on-resistance, low drive current, and is capable of 4.5V gate drive, making it suitable for high-density mounting. This Pb-free and halogen-free component is ideal for Switching Mode Power Supply applications.
Product Attributes
- Brand: RENESAS
- Certifications: Pb-free, Halogen-free
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Drain to source breakdown voltage | V(BR)DSS | 60 | - | - | V | ID = 10 mA, VGS = 0 V |
| Gate to source leak current | IGSS | - | - | ±0.1 | μA | VGS = ±20 V, VDS = 0 V |
| Zero gate voltage drain current | IDSS | - | - | 1 | μA | VDS = 60 V, VGS = 0 V |
| Gate to source cutoff voltage | VGS(off) | 1.2 | - | 2.5 | V | VDS = 10 V, ID = 1 mA |
| Static drain to source on state resistance | RDS(on) | - | 5.5 | 7.0 | mΩ | ID = 17.5 A, VGS = 10 V Note4 |
| Static drain to source on state resistance | RDS(on) | - | 6.5 | 9.0 | mΩ | ID = 17.5 A, VGS = 4.5 V Note4 |
| Forward transfer admittance | |yfs| | - | 54 | - | S | ID = 17.5 A, VDS = 10 V Note4 |
| Input capacitance | Ciss | - | 4100 | - | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz |
| Output capacitance | Coss | - | 485 | - | pF | |
| Reverse transfer capacitance | Crss | - | 200 | - | pF | |
| Gate Resistance | Rg | - | 0.4 | - | Ω | - |
| Total gate charge | Qg | - | 29 | - | nC | VDD = 25 V, VGS = 4.5 V, ID = 35 A |
| Gate to source charge | Qgs | - | 13 | - | nC | |
| Gate to drain charge | Qgd | - | 8.8 | - | nC | |
| Turn-on delay time | td(on) | - | 11 | - | ns | VGS = 10 V, ID = 17.5 A, VDD ≈ 30 V, RL = 1.71 Ω, Rg = 4.7 Ω |
| Rise time | tr | - | 7.0 | - | ns | |
| Turn-off delay time | td(off) | - | 54 | - | ns | |
| Fall time | tf | - | 10 | - | ns | |
| Body–drain diode forward voltage | VDF | - | 0.83 | 1.1 | V | IF = 35 A, VGS = 0 V Note4 |
| Body–drain diode reverse recovery time | trr | - | 35 | - | ns | IF = 35 A, VGS = 0 V diF/ dt = 100 A/ μs |
| Drain to source voltage | VDSS | - | - | 60 | V | - |
| Gate to source voltage | VGSS | - | - | ±20 | V | - |
| Drain current | ID | - | - | 35 | A | - |
| Drain peak current | ID(pulse) | - | - | 140 | A | Note1 |
| Body-drain diode reverse drain current | IDR | - | - | 35 | A | - |
| Avalanche current | IAP | - | - | 17.5 | A | Note 2 |
| Avalanche energy | EAS | - | - | 23 | mJ | Note 2 |
| Channel dissipation | Pch | - | - | 55 | W | Note3 |
| Channel to Case Thermal Resistance | θch-C | - | 2.27 | - | °C/W | - |
| Channel temperature | Tch | - | - | 150 | °C | - |
| Storage temperature | Tstg | -55 | - | +150 | °C | - |
2403201350_RENESAS-RJK0652DPB-00-J5_C6269985.pdf
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