switching dual digital transistor ROHM EMG2T2R with integrated resistors in SOT 553 package design
Key Attributes
Model Number:
EMG2T2R
Product Custom Attributes
Input Resistor:
47kΩ
Resistor Ratio:
1
Number:
2 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMG2T2R
Package:
EMT-5
Product Description
Product Overview
The EMG2 / UMG2N / FMG2A series are dual digital transistors featuring integrated resistors, housed in compact SOT-553 (EMT5), SOT-353 (UMT5), and SOT-25 (SMT5) packages. These devices offer a cost-effective and space-saving solution by integrating two DTC144E chips. They are designed for applications such as inverters, interfaces, and drivers, providing efficient switching and signal conditioning.
Product Attributes
- Brand: ROHM
- Product Type: Dual Digital Transistor
Technical Specifications
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCC (Max) | IC(MAX) | R1 | R2 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EMG2 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G2 | 50V | 100mA | 47k | 47k |
| UMG2N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G2 | 50V | 100mA | 47k | 47k |
| FMG2A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | G2 | 50V | 100mA | 47k | 47k |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| Supply voltage | VCC | 50 | V |
| Input voltage | VIN | -10 to 40 | V |
| Output current | IO | 30 | mA |
| Collector current | IC(MAX)*1 | 100 | mA |
| Power dissipation (EMG2, UMG2N) | PD*2*3 | 150 | mW |
| Power dissipation (FMG2A) | PD*2*4 | 300 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 2mA | 3.0 | - | - | V |
| Output voltage (ON) | VO(on) | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 180 | A |
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 5mA | 68 | - | - | - |
| Input resistance | R1 | - | - | 47 | - | k |
| Resistance ratio | R2/R1 | - | - | 1.0 | - | - |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
2210111600_ROHM-EMG2T2R_C3588816.pdf
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