Built in Bias Resistors Digital Transistor ROHM DTA114TUAT106 PNP Type for Simplified Circuit Design
Key Attributes
Model Number:
DTA114TUAT106
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
13kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA114TUAT106
Package:
SOT-323
Product Description
Product Overview
The ROHM DTA114T series is a PNP digital transistor featuring built-in biasing resistors, simplifying circuit design by eliminating the need for external input resistors. This integration allows for inverter circuit configurations with only on/off conditions to be set, making circuit design easy. It is suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are also available in the DTC114T series.Product Attributes
- Brand: ROHM
- Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
- Polarity: PNP
Technical Specifications
| Model | Package | Package Size | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) | Marking |
|---|---|---|---|---|---|---|---|
| DTA114TM | SOT-723 | 1212 | -50 | -100 | 10 | 150*1 | 94 |
| DTA114TEB | SOT-416FL | 1616 | -50 | -100 | 10 | 150*1 | 94 |
| DTA114TE | SOT-416 | 1616 | -50 | -100 | 10 | 150*1 | 94 |
| DTA114TUB | SOT-323FL | 2021 | -50 | -100 | 10 | 200*1 | 94 |
| DTA114TUA | SOT-323 | 2021 | -50 | -100 | 10 | 200*1 | 94 |
| DTA114TKA | SOT-346 | 2928 | -50 | -100 | 10 | 200*1 | 94 |
*1 Each terminal mounted on a reference land.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -500 | nA |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -10mA, IB = -1mA | - | - | -300 | mV |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 7 | 10 | 13 | k |
| Transition frequency | fT*2 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*2 Characteristics of built-in transistor
2204081930_ROHM-DTA114TUAT106_C2987910.pdf
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