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quality Integrated bias resistor PNP transistor ROHM DTA114EE3TL designed for inverter and driver circuit applications factory
quality Integrated bias resistor PNP transistor ROHM DTA114EE3TL designed for inverter and driver circuit applications factory
quality Integrated bias resistor PNP transistor ROHM DTA114EE3TL designed for inverter and driver circuit applications factory
quality Integrated bias resistor PNP transistor ROHM DTA114EE3TL designed for inverter and driver circuit applications factory

Integrated bias resistor PNP transistor ROHM DTA114EE3TL designed for inverter and driver circuit applications

Key Attributes
Model Number: DTA114EE3TL
Product Custom Attributes
DC Current Gain:
30@5mA,5V
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
10kΩ
Resistor Ratio:
1
Pd - Power Dissipation:
150mW
Mfr. Part #:
DTA114EE3TL
Product Description

Product Overview

The DTA114E series is a range of PNP digital transistors featuring built-in bias resistors (R1 = R2 = 10k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations with straightforward on/off condition settings. These transistors are suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC114E series.

Product Attributes

  • Brand: ROHM

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Quantity (pcs) Marking
DTA114EM SOT-723 1212 T2L 180 8 8000 14
DTA114EEB SOT-416FL 1616 TL 180 8 3000 14
DTA114EE3 SOT-416 1616 TL 180 8 3000 14
DTA114EUB SOT-323FL 2021 TL 180 8 3000 14
DTA114EU3 SOT-323 2021 T106 180 8 3000 14
DTA114EKA SOT-346 2928 T146 180 8 3000 14
Parameter Symbol Value Unit
Supply voltage VCC -50 V
Input voltage VIN -40 to 10 V
Output current IO -50 mA
Collector current (MAX) IC(MAX)*1 -100 mA
Power dissipation (DTA114EM) PD*2 150 mW
Power dissipation (DTA114EEB) PD*2 150 mW
Power dissipation (DTA114EE3) PD*2 150 mW
Power dissipation (DTA114EUB) PD*2 200 mW
Power dissipation (DTA114EU3) PD*2 200 mW
Power dissipation (DTA114EKA) PD*2 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Input voltage (VI(off)) VI(off) -0.5 V
Input voltage (VI(on)) VI(on) -3.0 -
Output voltage (VO(on)) VO(on) -100 to -300 mV
Input current II -880 A
Output current (IO(off)) IO(off) -500 nA
DC current gain GI 30 -
Input resistance R1 7 to 13 k
Resistance ratio R2/R1 0.8 to 1.2 -
Transition frequency fT*1 250 MHz

Applications

  • INVERTER
  • INTERFACE
  • DRIVER

Complementary NPN Types

  • DTC114E series

2401251540_ROHM-DTA114EE3TL_C20108205.pdf

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