Compact SOT 553 package dual transistor ROHM EMG9T2R ideal for inverter and driver circuit applications
Product Overview
The EMG9 / UMG9N / FMG9A series are dual digital transistors housed in compact SOT-553 (EMT5), SOT-353 (UMT5), and SOT-25 (SMT5) packages. These devices integrate two DTC114E chips, offering a significant reduction in mounting cost and area. They are designed for applications such as inverters, interfaces, and drivers.
Product Attributes
- Brand: ROHM
- Product Series: EMG9 / UMG9N / FMG9A
- Chip Type: DTC114E
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMG9 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G9 |
| UMG9N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G9 |
| FMG9A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | G9 |
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | |||
|---|---|---|---|
| Parameter | Symbol | Values | Unit |
| Supply voltage | VCC | 50 | V |
| Input voltage | VIN | -10 to 40 | V |
| Output current | IO | 50 | mA |
| Collector current | IC(MAX)*1 | 100 | mA |
| Power dissipation (EMG9) | PD*2*3 | 150 | mW |
| Power dissipation (UMG9N) | PD*2*3 | 150 | mW |
| Power dissipation (FMG9A) | PD*2*4 | 300 | mW |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 | |
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
|---|---|---|---|---|---|---|
| Parameter | Symbol | Conditions | Values (Min.) | Values (Typ.) | Values (Max.) | Unit |
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 10mA | 3.0 | - | - | V |
| Output voltage (ON) | VO(on) | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 880 | A |
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 5mA | 30 | - | - | - |
| Input resistance | R1 | - | 7 | 10 | 13 | k |
| Resistance ratio | R2/R1 | - | 0.8 | 1.0 | 1.2 | - |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
2210111600_ROHM-EMG9T2R_C3589077.pdf
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