Dual transistor ROHM IMT1AT110 designed to reduce mounting cost and area for small signal amplification

Key Attributes
Model Number: IMT1AT110
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
140MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
IMT1AT110
Package:
SOT-457
Product Description

Product Overview

The EMT1 / UMT1N / IMT1A are general-purpose dual transistors designed for small signal amplification. They feature two independent 2SA1037AK chips within a single EMT, UMT, or SMT package, enabling half the mounting cost and area compared to discrete components. These transistors are compatible with automatic mounting machines and offer interference-free operation due to their independent elements.

Product Attributes

  • Brand: ROHM
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: RoHS Yes

Technical Specifications

Part NumberPackageVCEO (V)IC (mA)PD (mW/Total)VCBO (V)VCEO (V)VEBO (V)ICBO (nA)IEBO (nA)VCE(sat) (mV)hFEfT (MHz)Cob (pF)
EMT1 / UMT1N / IMT1AEMT6 / UMT6 / SMT6-50-150EMT1/UMT1N: 150
IMT1A: 300
-60-50-6-100-100-500120 - 560140- 5

1808272306_ROHM-IMT1AT110_C111730.pdf

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