Silicon Planar Zener Diode Shikues BZT52B5V6 with SOD123 Package and 500mW Power Dissipation Rating
Key Attributes
Model Number:
BZT52B5V6
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
1uA@2.5V
Pd - Power Dissipation:
500mW
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
5.49V~5.71V
Zener Voltage(Nom):
5.6V
Mfr. Part #:
BZT52B5V6
Package:
SOD-123
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.0V to 75V. These diodes offer a total power dissipation of up to 500mW and come in a small plastic package (SOD-123) suitable for surface-mounted designs. They feature a tolerance of approximately 2%.
Product Attributes
- Case: SOD-123
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 16mg/0.00056oz
Technical Specifications
| Type | Zener Voltage Range (V) Nom. | Zener Voltage Range (V) Min. | Zener Voltage Range (V) Max. | ZT (mA) | ZZT Max. () | IR Max (A) |
| BZT52B2V4 | 2.24 | 2.16 | 2.35 | 5 | 120 | 2.2 |
| BZT52B2V7 | 2.45 | 2.35 | 2.75 | 5 | 120 | 2.2 |
| BZT52B3V0 | 2.75 | 2.65 | 3.06 | 5 | 120 | 2.2 |
| BZT52B3V3 | 3.06 | 2.94 | 3.37 | 5 | 120 | 2.2 |
| BZT52B3V6 | 3.37 | 3.23 | 3.67 | 5 | 110 | 2.2 |
| BZT52B3V9 | 3.67 | 3.53 | 3.98 | 5 | 100 | 2.2 |
| BZT52B4V3 | 3.98 | 3.82 | 4.39 | 5 | 100 | 2.2 |
| BZT52B4V7 | 4.39 | 4.21 | 4.79 | 5 | 80 | 2.2 |
| BZT52B5V1 | 4.79 | 4.61 | 5.20 | 5 | 80 | 2.2 |
| BZT52B5V6 | 5.20 | 5 | 5.71 | 5 | 70 | 2.2 |
| BZT52B6V2 | 5.71 | 5.49 | 6.32 | 5 | 60 | 2.2 |
| BZT52B6V8 | 6.32 | 6.08 | 6.94 | 5 | 55 | 2.2 |
| BZT52B7V5 | 6.94 | 6.66 | 7.65 | 5 | 50 | 2.2 |
| BZT52B8V2 | 7.65 | 7.35 | 8.36 | 5 | 45 | 2.2 |
| BZT52B9V1 | 8.36 | 8.04 | 9.28 | 5 | 40 | 2.2 |
| BZT52B10 | 9.28 | 8.92 | 10.2 | 5 | 40 | 2.2 |
| BZT52B11 | 10.2 | 9.8 | 11.22 | 5 | 35 | 2.2 |
| BZT52B12 | 11.22 | 10.78 | 12.24 | 5 | 35 | 2.2 |
| BZT52B13 | 12.24 | 11.76 | 13.26 | 5 | 30 | 2.2 |
| BZT52B15 | 13.26 | 12.74 | 15.3 | 5 | 30 | 2.2 |
| BZT52B16 | 15.3 | 14.7 | 16.32 | 5 | 30 | 2.2 |
| BZT52B18 | 16.32 | 15.68 | 18.36 | 5 | 30 | 2.2 |
| BZT52B20 | 18.36 | 17.64 | 20.4 | 5 | 30 | 2.2 |
| BZT52B22 | 20.4 | 19.6 | 22.44 | 5 | 30 | 2.2 |
| BZT52B24 | 22.44 | 21.56 | 24.48 | 5 | 30 | 2.2 |
| BZT52B27 | 24.48 | 23.52 | 27.54 | 5 | 30 | 2.2 |
| BZT52B30 | 27.54 | 26.46 | 30.6 | 5 | 30 | 2.2 |
| BZT52B33 | 30.6 | 29.4 | 33.66 | 5 | 30 | 2.2 |
| BZT52B36 | 33.66 | 32.34 | 36.72 | 5 | 30 | 2.2 |
| BZT52B39 | 36.72 | 35.28 | 39.78 | 5 | 30 | 2.2 |
| BZT52B43 | 39.78 | 38.22 | 43.86 | 5 | 30 | 2.2 |
| BZT52B47 | 43.86 | 42.14 | 47.94 | 5 | 30 | 2.2 |
| BZT52B51 | 47.94 | 46.06 | 52.02 | 5 | 30 | 2.2 |
| BZT52B56 | 52.02 | 49.98 | 57.12 | 5 | 30 | 2.2 |
| BZT52B62 | 57.12 | 54.88 | 63.24 | 5 | 30 | 2.2 |
| BZT52B68 | 63.24 | 60.76 | 69.36 | 5 | 30 | 2.2 |
| BZT52B75 | 69.36 | 66.64 | 76.5 | 5 | 30 | 2.2 |
2410121525_Shikues-BZT52B5V6_C5356488.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
