switching transistor ROHM DTD513ZETL featuring low VCEsat and built in thin film bias resistors
Key Attributes
Model Number:
DTD513ZETL
Product Custom Attributes
Output Voltage(VO(on)):
60mV
Input Resistor:
1kΩ
Resistor Ratio:
12
Number:
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
DTD513ZETL
Package:
SOT-416
Product Description
Product Overview
The DTD513Z series digital transistors are designed for efficient switching applications, featuring a low VCE(sat) compared to conventional products. These transistors incorporate built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors and enabling the configuration of inverter circuits. The thin-film bias resistors offer complete isolation, allowing for negative input biasing and minimizing parasitic effects. They are ideal for use in inverters, interfaces, and driver circuits.
Product Attributes
- Brand: ROHM
- Series: DTD513Z
Technical Specifications
| Parameter | Model | Value | Unit |
|---|---|---|---|
| Supply Voltage | DTD513Z series | 12 | V |
| Maximum Collector Current | DTD513Z series | 500 | mA |
| Built-in Resistor R1 | DTD513Z series | 1k | |
| Built-in Resistor R2 | DTD513Z series | 10k | |
| Package | DTD513ZM | SOT-723 (VMT3) | |
| Package Size | DTD513ZM | 1212 | |
| Taping Code | DTD513ZM | T2L | |
| Reel Size | DTD513ZM | 180 | mm |
| Tape Width | DTD513ZM | 8 | mm |
| Basic Ordering Unit | DTD513ZM | 8000 | pcs |
| Marking | DTD513ZM | Y21 | |
| Package | DTD513ZE | SOT-416 (EMT3) | |
| Package Size | DTD513ZE | 1616 | |
| Taping Code | DTD513ZE | TL | |
| Reel Size | DTD513ZE | 180 | mm |
| Tape Width | DTD513ZE | 8 | mm |
| Basic Ordering Unit | DTD513ZE | 3000 | pcs |
| Marking | DTD513ZE | Y21 | |
| Absolute Maximum Supply Voltage | DTD513Z series | 12 | V |
| Absolute Maximum Input Voltage | DTD513Z series | -5 to 10 | V |
| Absolute Maximum Collector Current | DTD513Z series | 500 | mA |
| Absolute Maximum Power Dissipation | DTD513ZM | 150 | mW |
| Absolute Maximum Power Dissipation | DTD513ZE | 150 | mW |
| Absolute Maximum Junction Temperature | DTD513Z series | 150 | |
| Absolute Maximum Storage Temperature Range | DTD513Z series | -55 to +150 | |
| Electrical Input Voltage (VI(off)) | DTD513Z series | - | 0.3 V |
| Electrical Input Voltage (VI(on)) | DTD513Z series | 2.5 | - V |
| Electrical Output Voltage (VO(on)) | DTD513Z series | - | 60 to 300 mV |
| Electrical Input Current (II) | DTD513Z series | - | 6.4 mA |
| Electrical Output Current (IO(off)) | DTD513Z series | - | 500 nA |
| Electrical DC Current Gain (GI) | DTD513Z series | 140 | - |
| Electrical Input Resistance (R1) | DTD513Z series | - | 0.7 to 1.3 k |
| Electrical Resistance Ratio (R2/R1) | DTD513Z series | - | 8 to 12 - |
| Electrical Transition Frequency (fT) | DTD513Z series | - | 260 MHz |
2212011400_ROHM-DTD513ZETL_C2941036.pdf
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