Digital transistor ROHM EMH60T2R featuring integrated bias resistors for switching and interface circuits
Key Attributes
Model Number:
EMH60T2R
Product Custom Attributes
DC Current Gain:
80@5mA,10V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
150mV@5mA,0.5mA
Input Resistor:
2.2kΩ
Resistor Ratio:
21
Number:
2 NPN (Pre-Biased)
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMH60T2R
Package:
SOT-563
Product Description
Product Overview
The EMH60 is a complex digital transistor featuring built-in bias resistors, available in an SOT-563 package. It integrates two DTC023J chips within an EMT6 package, offering independent transistor elements to eliminate interference. This design allows for mounting with EMT3 automatic mounting machines, significantly reducing mounting costs and area by half. The EMH60 is suitable for switching circuits, inverter circuits, interface circuits, and driver circuits.
Product Attributes
- Brand: ROHM
- Package Type: SOT-563 (EMT6)
Technical Specifications
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH60 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H60 |
| Parameter | Symbol | Conditions | Values (Min.) | Values (Typ.) | Values (Max.) | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | 12 | -5 | V | ||
| Output current | IO | 100 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation | PD*2*3 | 150 | mW/TOTAL | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage | VI(off) | VCC = 5V, IO = 0.1mA | 0.5 | V | ||
| Input voltage | VI(on) | VO = 0.3V, IO = 5mA | 1.1 | V | ||
| Output voltage | VO(on) | IO = 5mA, II = 0.5mA | 50 | 150 | mV | |
| Input current | II | VI = 5V | 3.6 | mA | ||
| Output current | IO(off) | VCC = 50V, VI = 0V | 500 | nA | ||
| DC current gain | GI | VO = 10V, IO = 5mA | 80 | - | ||
| Input resistance | R1 | 2.2 | k | |||
| Resistance ratio | R2/R1 | 21 | - | |||
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | 250 | MHz | ||
*1 Characteristics of built-in transistor.
*2 Terminal mounted on a reference footprint.
*3 120mW per element must not be exceeded.
2305061755_ROHM-EMH60T2R_C5443921.pdf
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