High reliability dual transistor ROHM EMH2T2R with two independent transistors in compact SOT package

Name: High reliability dual transistor ROHM EMH2T2R with two independent transistors in compact SOT package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: EMH2T2R
Availability: InStock

Key Attributes

Model Number: EMH2T2R

Product Custom Attributes

Output Voltage(VO(on)):

300mV@10mA,0.5mA

Input Resistor:

47kΩ

Resistor Ratio:

Number:

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

EMH2T2R

Package:

SOT-563

Product Description

Product Overview

The EMH2 / UMH2N / IMH2A series are general-purpose dual digital transistors featuring two independent transistor elements within a single package, designed to reduce mounting costs and space. These devices are suitable for automatic mounting machines and are ideal for applications such as inverters, interfaces, and drivers. They offer reliable performance with independent transistor elements that eliminate interference.

Product Attributes

Brand: ROHM

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
EMH2	SOT-563 (EMT6)	1616	T2R	180	8	8000	H2
UMH2N	SOT-363 (UMT6)	2021	TN	180	8	3000	H2
IMH2A	SOT-457 (SMT6)	2928	T110	180	8	3000	H2

Absolute Maximum Ratings (Ta = 25C)

Parameter	Symbol	Values	Unit
For DTr1 and DTr2 in common
Supply voltage	VCC	50	V
Input voltage	VIN	-10 to 40	V
Output current	IO	30	mA
Collector current	IC(MAX)*1	100	mA
Power dissipation (EMH2)	PD23	150	mW
Power dissipation (UMH2N)	PD23	150	mW
Power dissipation (IMH2A)	PD24	300	mW
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150

Electrical Characteristics (Ta = 25C)

Parameter	Conditions	Min.	Typ.	Max.	Unit
For DTr1 and DTr2 in common
Input voltage	VCC = 5V, IO = 100A	-	-	0.5	V
Input voltage	VO = 0.3V, IO = 2mA	3.0	-	-	V
Output voltage	IO = 10mA, II = 0.5mA	-	100	300	mV
Input current	VI = 5V	-	-	180	A
Output current	VCC = 50V, VI = 0V	-	-	500	nA
DC current gain	VO = 5V, IO = 5mA	68	-	-	-
Input resistance	R1	-	32.9	61.1	k
Resistance ratio	R2/R1	-	0.8	1.2	-
Transition frequency	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

1804241631_ROHM-EMH2T2R_C123006.pdf

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High reliability dual transistor ROHM EMH2T2R with two independent transistors in compact SOT package