Compact SOT package dual digital transistor inverter interface driver ROHM IMD3AT108 general purpose device

Key Attributes
Model Number: IMD3AT108
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMD3AT108
Package:
SOT-457
Product Description

Product Overview

The EMD3/UMD3N/IMD3A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate both NPN (EMD3/UMD3N) and PNP (IMD3A) transistor elements within compact SOT packages (SOT-563, SOT-363, SOT-457), offering a space-saving solution. The independent transistor elements prevent interference, and their integration halves mounting costs and area. They are compatible with automatic mounting machines.

Product Attributes

  • Brand: ROHM
  • Product Series: EMD3 / UMD3N / IMD3A

Technical Specifications

Model Package DTr1 (NPN) VCC DTr1 (NPN) IC(MAX.) DTr1 (NPN) R1 DTr1 (NPN) R2 DTr2 (PNP) VCC DTr2 (PNP) IC(MAX.) DTr2 (PNP) R1 DTr2 (PNP) R2 Packaging Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMD3 SOT-563 (EMT6) 50V 100mA 10k 10k -50V -100mA 10k 10k SOT-563 T2R 180 8 8000 D3
UMD3N SOT-363 (UMT6) 50V 100mA 10k 10k -50V -100mA 10k 10k SOT-363 TR 180 8 3000 D3
IMD3A SOT-457 (SMT6) 50V 100mA 10k 10k -50V -100mA 10k 10k SOT-457 T108 180 8 3000 D3

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol DTr1(NPN) Unit DTr2(PNP) Unit
Supply voltage VCC 50 V -50 V
Input voltage VIN -10 to 40 V -40 to 10 V
Output current IO 50 mA -50 mA
Collector current IC(MAX)*1 100 mA -100 mA
Power dissipation (EMD3/UMD3N) PD*2*3 150 mW/Total (120mW per element max)
Power dissipation (IMD3A) PD*2*4 300 mW (200mW per element max)
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

For DTr1(NPN)

Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (off) VI(off) VCC = 5V, IO = 100A - - 0.5 V
Input voltage (on) VI(on) VO = 0.3V, IO = 10mA 3.0 - - V
Output voltage (on) VO(on) IO = 10mA, II = 0.5mA - 100 300 mV
Input current II VI = 5V - - 880 A
Output current (off) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 5V, IO = 5mA 30 - - -
Input resistance R1 - - 7 13 k
Resistance ratio R2/R1 - 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

For DTr2(PNP)

Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (off) VI(off) VCC = -5V, IO = -100A - - -0.5 V
Input voltage (on) VI(on) VO = -0.3V, IO = -10mA -3.0 - - V
Output voltage (on) VO(on) IO = -10mA, II = -0.5mA - -100 -300 mV
Input current II VI = -5V - - -880 A
Output current (off) IO(off) VCC = -50V, VI = 0V - - -500 nA
DC current gain GI VO = -5V, IO = -5mA 30 - - -
Input resistance R1 - - 7 13 k
Resistance ratio R2/R1 - 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.

Applications

  • INVERTER
  • INTERFACE
  • DRIVER

2007151837_ROHM-IMD3AT108_C703622.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.