Silicon Planar Zener Diode Shikues BZT52C3V9 SOD123 Package with 500 Milliwatt Power Dissipation and 5 Percent Tolerance
Key Attributes
Model Number:
BZT52C3V9
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@1V
Pd - Power Dissipation:
500mW
Impedance(Zzt):
130Ω
Diode Configuration:
Independent
Zener Voltage(Range):
3.7V~4.1V
Zener Voltage(Nom):
3.9V
Mfr. Part #:
BZT52C3V9
Package:
SOD-123
Product Description
Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a total power dissipation of up to 500 mW and a tolerance of approximately 5%. Suitable for various voltage regulation applications.
Product Attributes
- Package Type: SOD-123
- Construction: Silicon Planar
- Tolerance: Approximately 5%
Technical Specifications
| Part Number | Zener Voltage (Vz) | Test Current (Iz) | Max. Zener Voltage (Vz max.) | Max. Dynamic Impedance (Zzt) | Reverse Leakage Current (Ir) | Forward Voltage (VF) | |
| (V) | (mA) | (V) | () | (A) | (V) | ||
| BZT52C2V0 | 2.0 | 5 | 2.15 | 100 | 120 | 0.5 | |
| BZT52C2V2 | 2.2 | 5 | 2.33 | 100 | 120 | 0.7 | |
| BZT52C2V4 | 2.4 | 5 | 2.56 | 100 | 120 | 1 | |
| BZT52C2V7 | 2.7 | 5 | 2.9 | 110 | 120 | 1 | |
| BZT52C3V0 | 3.0 | 5 | 3.2 | 120 | 50 | 1 | |
| BZT52C3V3 | 3.3 | 5 | 3.5 | 130 | 20 | 1 | |
| BZT52C3V6 | 3.6 | 5 | 3.8 | 130 | 10 | 1 | |
| BZT52C3V9 | 3.9 | 5 | 4.1 | 130 | 5 | 1 | |
| BZT52C4V3 | 4.3 | 5 | 4.6 | 130 | 5 | 1 | |
| BZT52C4V7 | 4.7 | 5 | 5 | 130 | 2 | 1 | |
| BZT52C5V1 | 5.1 | 5 | 5.4 | 130 | 2 | 1.5 | |
| BZT52C5V6 | 5.6 | 5 | 6 | 80 | 1 | 2.5 | |
| BZT52C6V2 | 6.2 | 5 | 6.6 | 50 | 1 | 3 | |
| BZT52C6V8 | 6.8 | 5 | 7.2 | 30 | 0.5 | 3.5 | |
| BZT52C7V5 | 7.5 | 5 | 7.9 | 30 | 0.5 | 4 | |
| BZT52C8V2 | 8.2 | 5 | 8.7 | 30 | 0.5 | 5 | |
| BZT52C9V1 | 9.1 | 5 | 9.6 | 30 | 0.5 | 6 | |
| BZT52C10 | 10 | 5 | 10.6 | 30 | 0.1 | 7 | |
| BZT52C11 | 11 | 5 | 11.6 | 30 | 0.1 | 8 | |
| BZT52C12 | 12 | 5 | 12.7 | 35 | 0.1 | 9 | |
| BZT52C13 | 13 | 5 | 14.1 | 35 | 0.1 | 10 | |
| BZT52C15 | 15 | 5 | 15.6 | 40 | 0.1 | 11 | |
| BZT52C16 | 16 | 5 | 17.1 | 40 | 0.1 | 12 | |
| BZT52C18 | 18 | 5 | 19.1 | 45 | 0.1 | 13 | |
| BZT52C20 | 20 | 5 | 21.2 | 50 | 0.1 | 15 | |
| BZT52C22 | 22 | 5 | 23.3 | 55 | 0.1 | 17 | |
| BZT52C24 | 24 | 5 | 25.6 | 60 | 0.1 | 19 | |
| BZT52C27 | 27 | 5 | 28.9 | 70 | 2 | 0.1 | 21 |
| BZT52C30 | 30 | 5 | 32 | 80 | 2 | 0.1 | 23 |
| BZT52C33 | 33 | 5 | 35 | 80 | 2 | 0.1 | 25 |
| BZT52C36 | 36 | 5 | 38 | 90 | 2 | 0.1 | 27 |
| BZT52C39 | 39 | 2.5 | 41 | 100 | 2 | 2 | 30 |
| BZT52C43 | 43 | 2.5 | 46 | 130 | 2 | 2 | 33 |
| BZT52C47 | 47 | 2.5 | 50 | 150 | 2 | 2 | 36 |
| BZT52C51 | 51 | 2.5 | 54 | 180 | 2 | 1 | 39 |
| BZT52C56 | 56 | 2.5 | 60 | 180 | 2 | 1 | 43 |
| BZT52C62 | 62 | 2.5 | 66 | 200 | 2 | 0.2 | 47 |
| BZT52C68 | 68 | 2.5 | 72 | 250 | 2 | 0.2 | 52 |
| BZT52C75 | 75 | 2.5 | 79 | 300 | 2 | 0.2 | 57 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 500 | mW |
| Junction Temperature | TJ | 150 | OC |
| Storage Temperature Range | TStg | -55 to +150 | OC |
Characteristics at Ta = 25 OC
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 340 | OC/W |
2410121248_Shikues-BZT52C3V9_C216709.pdf
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