High speed switching diode ROHM 1SS355TE-17 with low forward voltage and compact UMD2 package design
Key Attributes
Model Number:
1SS355TE-17
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Recovery Time (trr):
4ns
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Reverse Leakage Current (Ir):
100nA@80V
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS355TE-17
Package:
SOD-323
Product Description
Product Overview
The 1SS355 is a high-speed switching diode designed for surface mounting applications. It features a small package size (UMD2), fast switching speed with a typical reverse recovery time of 1.2ns, and high reliability due to its high surge current handling capability. Constructed from silicon epitaxial planar technology, this diode is suitable for various high-speed switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon epitaxial planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Limits | Unit | Conditions | |
| Peak reverse voltage | VRM | 90 | V | ||
| DC reverse voltage | VR | 80 | V | ||
| Peak forward current | IFM | 225 | mA | ||
| Surge current (1s) | Isurge | 500 | mA | ||
| Junction temperature | Tj | 125 | C | ||
| Mean rectifying current | IO | 100 | mA | ||
| Storage temperature | Tstg | 55~+125 | C | ||
| Forward voltage | VF | 1.2 | V | IF=100mA | |
| Reverse current | IR | 0.1 | A | VR=80V | |
| Capacitance between terminals | CT | 3.0 | pF | VR=0.5V, f=1MHz | |
| Reverse recovery time | trr | 4 | ns | VR=6V, IF=10mA, RL=100 |
1807281540_ROHM-1SS355TE-17_C122634.pdf
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