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quality High Voltage Silicon Carbide MOSFET SG2M021120LH with Low Switching Losses and Enhanced Power Density factory
quality High Voltage Silicon Carbide MOSFET SG2M021120LH with Low Switching Losses and Enhanced Power Density factory

High Voltage Silicon Carbide MOSFET SG2M021120LH with Low Switching Losses and Enhanced Power Density

Key Attributes
Model Number: SG2M021120LH
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
112A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
4.13nF
Pd - Power Dissipation:
441W
Gate Charge(Qg):
119nC
Mfr. Part #:
SG2M021120LH
Package:
TO-247-4L
Product Description

Product Overview

The SG2M021120LH is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. This N-channel enhancement mode MOSFET offers high-speed switching, very low switching losses, and fully controllable dv/dt. It features high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Designed for efficiency and increased power density, it is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies. The device is halogen-free and RoHS compliant.

Product Attributes

  • Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
  • Product Line: TriQSiCTM
  • Material: Silicon Carbide (SiC)
  • Channel Type: N Channel Enhancement
  • Compliance: Halogen free, RoHS compliant
  • Package Type: TO-247-4L

Technical Specifications

Type VDS (V) IDS (TC = 25) (A) RDS(on), typ (VGS = 15V, ID = 64A, TJ = 25) (m) TJ,max () Marking Package
SG2M021120LH 1200 112 21 175 SG2M021120LH TO-247-4L

Key Performance Parameters

Symbol Parameter Value Unit Test Conditions Note
VDS,max Drain source voltage 1200 V VGS = 0V, ID = 100A
VGS,max Gate source voltage -8 /+19 V Absolute maximum values Note1
VGSop Gate source voltage -4 /+15 V Recommended operational values
ID Continuous drain current 112 A VGS = 15V, TC = 25C Fig.19
ID Continuous drain current 79 A VGS = 15V, TC = 100C
ID(pulse) Pulsed drain current 224 A Pulse width tP limited by TJ,max Fig.22
PD Power dissipation 441 W TC= 25C,TJ = 175C Fig.20
TJ ,Tstg Operating Junction and storage temperature -55 to +175 C
TL Soldering temperature 260 C 1.6mm (0.063) from case for 10s
Rth(j-c) Thermal resistance from junction to case 0.27 C/W Fig.21
V(BR)DSS Drain-source breakdown voltage 1200 V VGS = 0V, ID = 100A
VGS(th) Gate threshold voltage 2.3 - 3.6 V VDS = VGS, ID = 18mA Fig.11
VGS(th) Gate threshold voltage 2.2 V VDS = VGS, ID = 18mA, TJ = 175C
IDSS Zero gate voltage drain current 1 A VDS = 1200V, VGS = 0V
IGSS Gate source leakage current 100 nA VGS = 15V, VDS = 0V
RDS(on) Current drain-source on-state resistance 20 - 28 m VGS = 15V, ID = 64A Fig.4,5, 6
RDS(on) Current drain-source on-state resistance 35 m VGS = 15V, ID = 64A, TJ = 175C
gfs Transconductance 44 S VDS = 20V, ID = 64A Fig.7
gfs Transconductance 42 S VDS = 20V, ID = 64A, TJ = 175C
Ciss Input capacitance 4130 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Coss Output capacitance 189 pF
Crss Reverse capacitance 9 pF
Eoss Coss stored energy 101 J Fig.16
Qgs Gate source charge 41 nC VDS = 800V, VGS = -4/+15V, ID = 64A Fig.12
Qgd Gate drain charge 37 nC
Qg Gate charge 119 nC
Eon Turn on switching energy 1032 J VDS = 800V, VGS = -4/+15V, ID = 64A, Rg = 2.5, L = 16.7H Fig.26
Eoff Turn off switching energy 274 J
tdon Turn on delay time 31 ns Fig.27
tr Rise time 24 ns
tdoff Turn off delay time 45 ns
tf Fall time 11 ns
VSD Diode forward voltage 4.0 V VGS = -4V, ISD = 32A Fig.8,9, 10
VSD Diode forward voltage 3.5 V VGS = -4V, ISD = 32A, TJ = 175C
IS Continuous diode forward current 98 A VGS = -4V, Tc = 25C Note2
trr Reverse recovery time 45 ns VR = 800V, VGS = -4V, ISD = 64A, di/dt = 2341A/s, TJ = 175C
Qrr Reverse recovery charge 740 nC
Irrm Peak reverse recovery current 29 A

2504101957_Sichainsemi-SG2M021120LH_C42456089.pdf

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