Dual digital transistor module ROHM IMH3AT110 suitable for inverter interface and driver applications

Key Attributes
Model Number: IMH3AT110
Product Custom Attributes
Input Resistor:
4.7kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMH3AT110
Package:
SOT-457-6
Product Description

Product Overview

The EMH3 / UMH3N / IMH3A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC143T chips within a single SOT-563, SOT-363, or SOT-457 package, offering significant advantages in terms of reduced mounting cost and board space by effectively halving them. Their independent transistor elements ensure interference-free operation, making them suitable for automated mounting machines.

Product Attributes

  • Brand: ROHM
  • Product Series: EMH3 / UMH3N / IMH3A

Technical Specifications

Model Package Type Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMH3 SOT-563 (EMT6) 1616 T2R 180 8 8000 H3
UMH3N SOT-363 (UMT6) 2021 TN 180 8 3000 H3
IMH3A SOT-457 (SMT6) 2928 T110 180 8 3000 H3
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Power dissipation PD*1*2 150 mW/Total
PD*1*3 300
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 3.29 4.7 6.11 k
Transition frequency fT*4 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

2207121830_ROHM-IMH3AT110_C4748898.pdf

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