Sichainsemi S1M032120H 1200V Silicon Carbide MOSFET for Switch Mode Power Supplies and DC DC Boosters
Key Attributes
Model Number:
S1M032120H
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
87A
RDS(on):
27mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.8pF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
96nC
Mfr. Part #:
S1M032120H
Package:
TO-247-4L
Product Description
Product Overview
The S1M032120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and requirements, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is halogen-free and RoHS compliant, making it suitable for demanding applications such as on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Certifications: Halogen free, RoHS compliant
- Package Type: TO-247-4L
Technical Specifications
| Type | VDS (V) | IDS (A) (TC = 25, Rth (j-c,max)) | RDS(ON), typ (m) (VGS = 15V, ID = 40A, TJ = 25) | Tj,max () | Marking | Package |
|---|---|---|---|---|---|---|
| S1M032120H | 1200 | 87 | 32 | 175 | S1M032120H | TO247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 87 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 62 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 188 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 375 | W | TC= 25C, TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.4 | C/W | Fig.21 | |
| Rth(j-a) | Thermal resistance from junction to ambient | 37 | 1 | Not subject to production test. Parameter verified by design/characterization. | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 11.5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.0 | V | VDS = VGS, ID = 11.5mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 / 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 32 / 40 | m | VGS = 15V, ID = 40A | Fig.4,5,6 |
| RDS(on) | Current drain-source on-state resistance | 49 | m | VGS = 15V, ID = 40A, TJ = 175C | |
| RDS(on) | Current drain-source on-state resistance | 27 / 34 | m | VGS = 18V, ID = 40A | |
| RDS(on) | Current drain-source on-state resistance | 47 | m | VGS = 18V, ID = 40A, TJ = 175C | |
| gfs | Transconductance | 24 | S | VDS = 20V, ID = 40A | Fig.7 |
| gfs | Transconductance | 25 | S | VDS = 20V, ID = 40A, TJ = 175C | |
| Rg,int | Internal gate resistance | 0.6 | VAC = 25mV, f = 1MHz | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 20A | Fig.8,9,10 |
| VSD | Diode forward voltage | 3.4 | V | VGS = -4V, ISD = 20A, TJ = 175C | |
| Ciss | Input capacitance | 2700 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz | Fig.17,18 |
| Coss | Output capacitance | 143 | pF | ||
| Crss | Reverse capacitance | 8.8 | pF | ||
| Eoss | Coss stored energy | 88 | J | Fig.16 | |
| Qgs | Gate source charge | 25.5 | nC | VDS = 800V, VGS = -4/+15V, ID = 40A | Fig.12 |
| Qgd | Gate drain charge | 30 | nC | ||
| Qg | Gate charge | 96 | nC | ||
| Eon | Turn on switching energy | 413 | J | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.26 |
| Eoff | Turn off switching energy | 60 | J | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.26 |
| tdon | Turn on delay time | 16 | ns | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.27 |
| tr | Rise time | 21 | ns | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.27 |
| tdoff | Turn off delay time | 27 | ns | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.27 |
| tf | Fall time | 9 | ns | VDS = 800V, VGS = -4/+15V, ID = 40A, Rg = 2.5, L = 120uH | Fig.27 |
| VSD | Diode forward voltage | 3.8 / 3.4 | V | VGS = -4V, ISD = 20A | Fig.8,9,10 |
| IS | Continuous diode forward current | 87 | A | VGS = -4V, Tc = 25C | Note1 |
| trr | Reverse recovery time | 55 | nS | VR = 800V, VGS = -4V, ID = 40A, di/dt = 2281A/S, TJ = 175C | |
| Qrr | Reverse recovery charge | 750 | nC | VR = 800V, VGS = -4V, ID = 40A, di/dt = 2281A/S, TJ = 175C | |
| Irrm | Peak reverse recovery current | 26 | A | VR = 800V, VGS = -4V, ID = 40A, di/dt = 2281A/S, TJ = 175C |
2410121937_Sichainsemi-S1M032120H_C22363604.pdf
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