AEC Q101 qualified ROHM UMH9NFHATN dual digital transistor with two DTC114Y chips in single package
Key Attributes
Model Number:
UMH9NFHATN
Product Custom Attributes
Output Voltage(VO(on)):
100mV
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Number:
2 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMH9NFHATN
Package:
SOT-363
Product Description
Product Overview
The UMH9N FHA is a general-purpose dual digital transistor housed in a SOT-363 (UMT6) package, offering AEC-Q101 qualification. It features two independent DTC114Y transistor elements within a single package, enabling mounting with UMT3 automatic machines and reducing interference. This design contributes to halved mounting costs and area. The UMH9N FHA is suitable for applications including inverters, interfaces, and drivers.
Product Attributes
- Brand: ROHM
- Package Type: SOT-363 (UMT6)
- Qualification: AEC-Q101
- Features: Dual digital transistors (2x DTC114Y chips), independent elements, UMT3 automatic mounting compatibility.
Technical Specifications
| Parameter | Symbol | Conditions | Values | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Supply voltage | VCC | 50 | V | |
| Input voltage | VIN | -6 to 40 | V | |
| Output current | IO | 70 | mA | |
| Collector current (MAX) | IC(MAX)*1 | 100 | mA | |
| Power dissipation | PD*2*3 | 150 | mW/TOTAL | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Input voltage (VI(off)) | VCC = 5V, IO = 100A | - to 0.3 | V | |
| Input voltage (VI(on)) | VO = 0.3V, IO = 1mA | 1.4 to - | V | |
| Output voltage (VO(on)) | IO = 5mA, II = 0.25mA | - to 100 | mV | |
| Input current | II | VI = 5V | - to 880 | A |
| Output current (IO(off)) | VCC = 50V, VI = 0V | - to 500 | n A | |
| DC current gain | GI | VO = 5V, IO = 5mA | 68 to - | - |
| Input resistance | R1 | 7 to 13 | k | |
| Resistance ratio | R2/R1 | 3.7 to 5.7 | - | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - to 250 | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
Packaging Specifications:
| Part No. | Package | Package size | Taping code | Reel size (mm) | Tape width (mm) | Basic ordering unit.(pcs) | Marking |
|---|---|---|---|---|---|---|---|
| UMH9N FHA | SOT-363 (UMT6) | 2021 TN | 180 | 8 | 3000 | H9 |
2210111600_ROHM-UMH9NFHATN_C3588478.pdf
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