Dual digital transistor ROHM EMB3T2R featuring two independent DTA143T chips for electronic applications
Key Attributes
Model Number:
EMB3T2R
Product Custom Attributes
Input Resistor:
4.7kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMB3T2R
Package:
SOT-563
Product Description
Product Overview
The EMB3 / UMB3N / IMB3A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTA143T chips within a compact EMT6, UMT6, or SMT6 package, offering significant advantages in mounting cost and board space reduction. Their independent transistor elements ensure no interference between them, making them ideal for space-constrained designs. These transistors are compatible with automatic mounting machines and are suitable for various electronic equipment.
Product Attributes
- Brand: ROHM
- Product Type: Dual Digital Transistor
- Integrated Chip: DTA143T
- Package Types: SOT-563 (EMT6), SOT-363 (UMT6), SOT-457 (SMT6)
- Mounting Compatibility: EMT3, UMT3, SMT3 automatic mounting machines
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCEO | IC | R1 | Power Dissipation (PD) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EMB3 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | B3 | -50V | -100mA | 4.7k | 150 mW/Total (120mW per element max) |
| UMB3N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | B3 | -50V | -100mA | 4.7k | 150 mW/Total (120mW per element max) |
| IMB3A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | B3 | -50V | -100mA | 4.7k | 300 mW/Total (200mW per element max) |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Collector-base voltage | VCBO | -50 | V | |||
| Collector-emitter voltage | VCEO | -50 | V | |||
| Emitter-base voltage | VEBO | -5 | V | |||
| Collector current | IC | -100 | mA | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -500 | nA |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -5mA, IB = -0.25mA | - | - | -300 | mV |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 3.29 | 6.11 | k | |
| Transition frequency | fT | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
2109101930_ROHM-EMB3T2R_C2889123.pdf
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