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quality Digital transistor ROHM EMD62T2R featuring built in bias resistors designed for compact EMT6 package mounting factory
quality Digital transistor ROHM EMD62T2R featuring built in bias resistors designed for compact EMT6 package mounting factory

Digital transistor ROHM EMD62T2R featuring built in bias resistors designed for compact EMT6 package mounting

Key Attributes
Model Number: EMD62T2R
Product Custom Attributes
Output Voltage(VO(on)):
150mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Number:
1 PNP Pre-Biased Transistor, 1 NPN
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMD62T2R
Package:
SOT-563(SOT-666)
Product Description

Product Overview

The EMD62 is a series of complex digital transistors featuring built-in bias resistors, available in both NPN (DTr1) and PNP (DTr2) configurations. These transistors are designed for integration into compact EMT6 packages, offering significant advantages in terms of reduced mounting costs and space. Their independent transistor elements ensure no interference, making them suitable for automatic mounting machines. The EMD62 series is ideal for switching circuits, inverter circuits, interface circuits, and driver circuits.

Product Attributes

  • Brand: ROHM
  • Package Type: SOT-563 (EMT6)
  • Chip Type: DTA044E and DTC044E

Technical Specifications

Model/Type Parameter Value Unit
EMD62 (DTr1 - NPN) Supply Voltage (VCC) 50 V
Max. Collector Current (IC(MAX)) 100 mA
Built-in Resistor R1 47 k
Built-in Resistor R2 47 k
Package Size 1616
Basic Ordering Unit (pcs) 8000
EMD62 (DTr2 - PNP) Supply Voltage (VCC) -50 V
Max. Collector Current (IC(MAX)) -100 mA
Built-in Resistor R1 47 k
Built-in Resistor R2 47 k
Package Size 1616
Basic Ordering Unit (pcs) 8000
Absolute Maximum Ratings (Ta = 25C) Supply voltage (VCC) DTr1(NPN) 50 V
Supply voltage (VCC) DTr2(PNP) -50 V
Input voltage (VIN) DTr1(NPN) 40 to -10 V
Input voltage (VIN) DTr2(PNP) -40 to 10 V
Output current (IO) DTr1(NPN) 30 mA
Output current (IO) DTr2(PNP) -30 mA
Collector current (IC(MAX)) DTr1(NPN) 100 mA
Collector current (IC(MAX)) DTr2(PNP) -100 mA
Power Dissipation (PD) Total 150 mW
Per Element (*3) 120 mW
Junction temperature (Tj) - 150
Storage temperature range (Tstg) -55 to +150
Electrical Characteristics (Ta = 25C) - DTr1(NPN) Input voltage VI(off) - 0.8 V
Input voltage VI(on) 3.0 - V
Output voltage VO(on) - 50 to 150 mV
Input current II - 180 A
Output current IO(off) - 500 nA
DC current gain GI 80 - -
Input resistance R1 32.9 to 61.1 47 k
Resistance ratio R2/R1 0.8 to 1.2 1.0 -
Transition frequency fT (*1) - 250 MHz
Conditions for VI(off) VCC = 5V, IO = 100A
Conditions for VI(on) VO = 0.3V, IO = 2mA
Conditions for VO(on) IO = 5mA, II = 0.5mA
Electrical Characteristics (Ta = 25C) - DTr2(PNP) Input voltage VI(off) - -0.8 V
Input voltage VI(on) -3.0 - V
Output voltage VO(on) - -70 to -150 mV
Input current II - -180 A
Output current IO(off) - -500 nA
DC current gain GI 80 - -
Input resistance R1 32.9 to 61.1 47 k
Resistance ratio R2/R1 0.8 to 1.2 1.0 -
Transition frequency fT (*1) - 250 MHz
Conditions for VI(off) VCC = -5V, IO = -100A
Conditions for VI(on) VO = -0.3V, IO = -2mA
Conditions for VO(on) IO = -5mA, II = -0.5mA

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.


2210111600_ROHM-EMD62T2R_C3588488.pdf

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