1200V Power MOSFET Silicon Carbide Sichainsemi S1M007120PD for Solar Power Optimizers and Inverters
Product Overview
The S1M007120PD is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This MOSFET is halogen-free and RoHS compliant, contributing to reduced cooling effort, improved efficiency, increased power density, and higher system switching frequencies. Key applications include EV motor drives, PV string inverters, solar power optimizers, and switch mode power supplies.
Product Attributes
- Brand: Sichain Semiconductor (Ningbo) Co., Ltd.
- Material: Silicon Carbide (SiC)
- Compliance: Halogen Free, RoHS Compliant
- Package Type: TO-247plus-4L
Technical Specifications
| Type | VDS | IDS (TC = 25) | Rth(j-c),max | RDS(on), typ (VGS = 18V, ID = 120A, TJ = 25) | TJ,max | Marking | Package |
|---|---|---|---|---|---|---|---|
| S1M007120PD | 1200V | 253A | 0.18 C/W | 7m | 175 | S1M007120PD | TO-247plus-4L |
Maximum Ratings
| Symbol | Parameter | Value | Unit | Test Conditions |
|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100 A |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values |
| ID | Continuous drain current | 253 | A | VGS = 18V, TC = 25C |
| ID | Continuous drain current | 179 | A | VGS = 18V, TC = 100C |
| ID(pulse) | Pulsed drain current | 506 | A | Pulse width tp limited by TJ,max |
| PD | Power dissipation | 833 | W | TC= 25C, TJ = 175C |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | - |
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s |
Thermal Characteristics
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Rth(j-c) | Thermal resistance from junction to case | - | 0.14 | 0.18 | C/W | - |
Electrical Characteristics (Static)
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-source breakdown voltage | 1200 | - | - | V | VGS = 0V, ID = 100A |
| VGS(th)S | Gate threshold voltage | 2.3 | 2.8 | 4 | V | VDS = VGS, ID = 56mA |
| VGS(th)S | Gate threshold voltage | - | 2.0 | - | V | VDS = VGS, ID = 56mA, TJ = 175C |
| IDSS | Zero gate voltage drain current | - | 1 | 10 | A | VDS = 1200V, VGS = 0V |
| IGSS | Gate source leakage current | - | - | 100 | nA | VGS = 18V, VDS = 0V |
| RDS(on) | Current drain-source on-state resistance | - | 7 | 10 | m | VGS = 18V, ID = 120A |
| RDS(on) | Current drain-source on-state resistance | - | 13 | - | m | VGS = 18V, ID = 120A, TJ = 175C |
| gfs | Transconductance | - | 89 | - | S | VDS = 20V, ID = 120A |
| gfs | Transconductance | - | 77 | - | S | VDS = 20V, ID = 120A, TJ = 175C |
| Rg,int | Internal gate resistance | - | 0.8 | - | VAC = 25mV, f = 1MHz, open drain |
Electrical Characteristics (Dynamic)
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Ciss | Input capacitance | - | 10931 | - | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz |
| Coss | Output capacitance | - | 422 | - | pF | - |
| Crss | Reverse capacitance | - | 35 | - | pF | - |
| Eoss | Coss stored energy | - | 278 | - | J | - |
Switching Characteristics
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Eon | Turn on switching energy | - | 1722 | - | J | VDS = 800V, VGS = -4/+18V, ID = 120A, Rg = 2.5, L = 16.7H |
| Eoff | Turn off switching energy | - | 844 | - | J | - |
| tdon | Turn on delay time | - | 38 | - | ns | - |
| tr | Rise time | - | 34 | - | ns | - |
| tdoff | Turn off delay time | - | 70 | - | ns | - |
| tf | Fall time | - | 16 | - | ns | - |
Body Diode Characteristics
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| VSD | Diode forward voltage | - | 3.9 | - | V | VGS = -4V, ISD = 100A |
| VSD | Diode forward voltage | - | 3.4 | - | V | VGS = -4V, ISD = 100A, TJ = 175C |
| IS | Continuous diode forward current | - | 205 | - | A | VGS = -4V, Tc = 25C |
| trr | Reverse recovery time | - | 54 | - | ns | VR = 800V, VGS = -4V, ISD = 120A, di/dt = 3108A/s, TJ = 175C |
| Qrr | Reverse recovery charge | - | 1820 | - | nC | - |
| Irrm | Peak reverse recovery current | - | 58 | - | A | - |
| Qgs | Gate source charge | - | 133 | - | nC | VDS = 800V, VGS =-4/+18V ID =120A |
| Qgd | Gate drain charge | - | 106 | - | nC | - |
| Qg | Gate charge | - | 429 | - | nC | - |
Package Drawing
TO-247plus-4L
Test Conditions
Refer to Figures A, B, and C in the datasheet for definitions of switching times and dynamic test circuits.
Revision History
V01_00 - 2023-09-20
V01_01 - 2024-05-08
V01_02 - 2024-05-15
V01_03 - 2024-06-18
Attention
1. RoHS compliance: Levels of RoHS restricted materials are below maximum concentration values or used in exempted applications, in accordance with EU Directive 2011/65/EC (RoHS2).
2. REACH compliance: REACh substances of high concern (SVHCs) information is available. Contact a Sichain representative for the most up-to-date REACh SVHC Declaration. REACh banned substance information is also available upon request.
3. Application information: Sichain disclaims all warranties and liabilities regarding the application of the product, including non-infringement of third-party intellectual property rights.
4. Customer compliance: Information provided is subject to customer compliance with obligations and applicable legal requirements, norms, and standards.
5. Product specifications: Specifications describe independent product performance and are not guarantees of performance when mounted in customer products or equipment.
6. Dangerous substances: Products may contain dangerous substances due to technical requirements. Contact Sichain for information.
7. High reliability applications: Sichain products may not be used in applications where failure could reasonably be expected to result in personal injury, unless explicitly approved in writing by Sichain.
8. Consultation for high reliability: For use in applications requiring a high degree of reliability (e.g., transportation, communication, safety, medical, power transmission systems), please consult with a Sichain representative.
2411261513_Sichainsemi-S1M007120PD_C37636035.pdf
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