High Voltage Silicon Carbide MOSFET SG2M040120LH with Low Reverse Recovery Charge and TO 247 Package
Key Attributes
Model Number:
SG2M040120LH
Product Custom Attributes
Mfr. Part #:
SG2M040120LH
Package:
TO-247-4L
Product Description
Product Overview
The SG2M040120LH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics contribute to reduced cooling effort, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. It is halogen-free and RoHS compliant, making it suitable for demanding applications such as on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Compliance: Halogen Free, RoHS Compliant, REACH Compliant
- Package Type: TO-247-4L
- Channel Type: N Channel Enhancement
Technical Specifications
| Type | VDS (V) | IDS (TC = 25, A) | RDS(on), typ (m) | TJ,max () | Package | Marking |
|---|---|---|---|---|---|---|
| SG2M040120LH | 1200 | 62 | 40 (VGS = 15V, ID = 32A, TJ = 25) | 175 | TO-247-4L | SG2M040120LH |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+19 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 62 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 44 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 124 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 268 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | |||
| TL | Soldering temperature | 260 | 1.6mm (0.063) from case for 10s | ||
| TM | Mounting torque | 1.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.45 - 0.56 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 9mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.0 | V | VDS = VGS, ID = 9mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 40 - 52 | m | VGS = 15V, ID = 32A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 70 | m | VGS = 15V, ID = 32A, TJ = 175C | |
| gfs | Transconductance | 22 | S | VDS = 20V, ID = 32A | Fig.7 |
| gfs | Transconductance | 20 | S | VDS = 20V, ID = 32A, TJ = 175C | |
| Rg,int | Internal gate resistance | 2.1 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 2171 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 109 | pF | ||
| Crss | Reverse capacitance | 3.8 | pF | ||
| Eoss | Coss stored energy | 56 | J | Fig.16 | |
| Qgs | Gate source charge | 25 | nC | VDS = 800V, VGS = -4/+15V, ID = 32A | Fig.12 |
| Qgd | Gate drain charge | 19 | nC | ||
| Qg | Gate charge | 65 | nC | ||
| Eon | Turn on switching energy | 255 | J | VDS = 800V, VGS = -4/+15V, ID = 32A, Rg = 2.5, L = 120H | Fig.26 |
| Eoff | Turn off switching energy | 47 | J | ||
| tdon | Turn on delay time | 18 | ns | Fig.27 | |
| tr | Rise time | 14 | ns | ||
| tdoff | Turn off delay time | 23 | ns | ||
| tf | Fall time | 9 | ns | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 16A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.3 | V | VGS = -4V, ISD = 16A, TJ = 175C | |
| IS | Continuous diode forward current | 62 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 31 | ns | VR = 800V, VGS = -4V, ISD = 32A, di/dt = 3015A/s, TJ = 175C | |
| Qrr | Reverse recovery charge | 524 | nC | ||
| Irrm | Peak reverse recovery current | 29 | A |
2504101957_Sichainsemi-SG2M040120LH_C42456093.pdf
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