Siliup SP10HF25TF TO247 Package MOSFET Featuring Low Rdson and High Frequency Performance for Power Management
Key Attributes
Model Number:
SP10HF25TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
351pF
Input Capacitance(Ciss):
5.13nF
Pd - Power Dissipation:
445W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
SP10HF25TF
Package:
TO-247
Product Description
Product Overview
The SP10HF25TF is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for PWM applications, hard switched and high frequency circuits, and power management. The device is 100% single pulse avalanche energy tested and comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP10HF25TF
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 250 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 160 | A | |||
| Continuous Drain Current (Tc=100) | ID | 107 | A | |||
| Pulsed Drain Current | IDM | 640 | A | |||
| Single Pulse Avalanche Energy | EAS | 1406 | mJ | |||
| Power Dissipation (Tc=25) | PD | 445 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.28 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V , ID=250uA | 250 | 285 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | - | 10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=40A | - | 10 | 12.5 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 5130 | - | pF |
| Output Capacitance | Coss | - | 351 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=200V , VGS=0-10V , ID=40A | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 28 | - | ||
| Gate-Drain Charge | Qgd | - | 22 | - | ||
| Turn-On Delay Time | Td(on) | VDD=200V, VGS=10V , RG=1.6, ID=40A | - | 33 | - | nS |
| Rise Time | Tr | - | 15 | - | ||
| Turn-Off Delay Time | Td(off) | - | 75 | - | ||
| Fall Time | Tf | - | 8 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 160 | A | |
| Reverse recover time | Trr | IS=40A, di/dt=100A/us, Tj=25 | - | 119 | - | nS |
| Reverse recovery charge | Qrr | - | 0.55 | - | nC | |
| TO-247 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Unit |
| A | 4.850 | 5.150 | |
| A1 | 2.200 | 2.600 | |
| b2 | 1.800 | 2.200 | |
| b | 1.000 | 1.400 | |
| b1 | 2.800 | 3.200 | |
| c | 0.500 | 0.700 | |
| c1 | 1.900 | 2.100 | |
| D | 15.450 | 15.750 | |
| E1 | 3.500 | REF. | |
| E2 | 3.600 | REF. | |
| L | 40.900 | 41.300 | |
| L1 | 24.800 | 25.100 | |
| L2 | 20.300 | 20.600 | |
| 7.100 | 7.300 | ||
| e | 5.450 | TYP. | |
| H1 | 5.980 | REF. | |
| h | 0.000 | 0.300 | |
2412041501_Siliup-SP10HF25TF_C42404763.pdf
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