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quality Power Switching MOSFET Siliup SP40N01GNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package factory
quality Power Switching MOSFET Siliup SP40N01GNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package factory

Power Switching MOSFET Siliup SP40N01GNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package

Key Attributes
Model Number: SP40N01GNK
Product Custom Attributes
Pd - Power Dissipation:
130W
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1mΩ@10V;1.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
1.85nF
Input Capacitance(Ciss):
5.5nF
Gate Charge(Qg):
126nC@10V
Mfr. Part #:
SP40N01GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N01GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications and DC-DC converters. It comes in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP40N01GNK
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L
  • Device Code: SP40N01GNK

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS 40 V
RDS(on) TYP @10V 1.1 m
RDS(on) TYP @4.5V 1.7 m
ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) Silicon Limit ID 230 A
Continuous Drain Current (Tc=25) Package Limit ID 120 A
Continuous Drain Current (Tc=100) ID 80 A
Pulsed Drain Current IDM 480 A
Single Pulse Avalanche Energy1 EAS 1089 mJ
Power Dissipation (Tc=25) PD 130 W
Thermal Resistance Junction-to-Case RJC 0.96 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 40 - - V
Drain Cut-Off Current IDSS VDS=32V, VGS=0V, TJ=25 - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID =250uA 1.0 1.8 2.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=20A - 1.1 1.35 m
Drain-Source ON Resistance RDS(ON) VGS=4.5V, ID=10A - 1.7 2.3 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V, VGS=0V, f=1MHz - 5500 - pF
Output Capacitance Coss - 1850 - pF
Reverse Transfer Capacitance Crss - 65 - pF
Total Gate Charge Qg VDS=20V, VGS=10V, ID=85A - 126 - nC
Gate-Source Charge Qgs - 19 - nC
Gate-Drain Charge Qgd - 12 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=20V, VGS=10V, RG=1.6, ID=85A - 14 - nS
Rise Time tr - 8 - nS
Turn-Off Delay Time td(off) - 56 - nS
Fall Time tf - 10 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 120 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 68 - nS
Reverse Recovery Charge Qrr - 50 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP40N01GNK_C42372368.pdf
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