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quality AEC Q101 qualified RUILON 2N5551 high voltage transistor with PPAP capability and halogen free materials factory
quality AEC Q101 qualified RUILON 2N5551 high voltage transistor with PPAP capability and halogen free materials factory

AEC Q101 qualified RUILON 2N5551 high voltage transistor with PPAP capability and halogen free materials

Key Attributes
Model Number: 2N5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
80@10mA,5V
Transition Frequency(fT):
-
Type:
NPN
Vce Saturation(VCE(sat)):
200mV@50mA,5mA
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2N5551
Package:
SOT-23
Product Description

Product Overview

High Voltage Transistors designed for automotive and general applications requiring unique site and control change requirements. These transistors are AEC-Q101 qualified and PPAP capable, offering RoHS compliance and Halogen Free materials.

Product Attributes

  • RoHS Compliant
  • Halogen Free
  • AEC-Q101 Qualified
  • PPAP Capable

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitNotes
MAXIMUM RATINGS (Ta = 25C)
Collector current--ContinuousIC--600mA
Collector-Emitter VoltageVCEO--160V
Collector-Base voltageVCBO--180V
Emitter-Base VoltageVEBO--6.0V
Total Device Dissipation, FR5 BoardPD-225-mW@ TA = 25C, Derate above 25C 556 mW/
Thermal Resistance, JunctiontoAmbient (FR-5 Board)RJA-417-/WFR5 = 1.00.750.062 in.
Total Device Dissipation, Alumina SubstratePD-556-mW@ TA = 25C, Derate above 25C 1.8 mW/
Thermal Resistance, JunctiontoAmbient (Alumina Substrate)RJA-1.8-/WAlumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Junction and Storage temperatureTJ,Tstg-55-+150
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageV(BR)CEO160--V(IC = 1.0 mA, IB = 0)
Collector-Base Breakdown voltageV(BR)CBO180--V(IC = 100A, IE = 0)
Emitter-Base Breakdown VoltageV(BR)EBO6.0--V(IE = 10 A, IC = 0)
Collector Cutoff CurrentICBO--50nA(VCB = 120 V, IE = 0)
Collector Cutoff Current @ 100CICBO--100nA(VCB = 120 V, IE = 0, TA = 100C)
Emitter Cutoff CurrentIEBO--50nA(VEB = 4.0 V, IC = 0)
Collector Emitter Cut-off CurrentICES--50nA(VCB = 10 V)
Collector Emitter Cut-off CurrentICES--50nA(VCB = 75 V)
ON CHARACTERISTICS
DC Current GainHFE-50-(IC = 1.0 mA, VCE = 5.0 V)
DC Current GainHFE-80250(IC = 10 mA, VCE = 5.0 V)
DC Current GainHFE--50(IC = 50 mA, VCE = 5.0 V)
Collector-Emitter Saturation VoltageVCE(S)--0.15V(IC = 10 mA, IB = 1.0 mA)
Collector-Emitter Saturation VoltageVCE(S)--0.2V(IC = 50 mA, IB = 5.0 mA)
Base-Emitter Saturation VoltageVBE(S)--1.0V(IC = 10 mA, IB = 1.0 mA)
Base-Emitter Saturation VoltageVBE(S)--1.1V(IC = 50 mA, IB = 5.0 mA)
DEVICE MARKING AND ORDERING INFORMATION
Part NumberDevice MarkingShippingParameterLimitsUnit
2N5551LT3GG110000/Tape&ReelRJA417/W
2N5551LT3GG110000/Tape&ReelPD225mW
2N5551LT1GG13000/Tape&ReelPD300mW
2N5551LT1GG13000/Tape&ReelVCEO160V
2N5551LT1GG13000/Tape&ReelIC600mA

2410121951_RUILON-2N5551_C7529570.pdf

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