N Channel MOSFET Siliup SP85N01BGHTO 85V Featuring Fast Switching and Low RDSon for Power Management
Key Attributes
Model Number:
SP85N01BGHTO
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
350A
RDS(on):
1.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 N-channel
Output Capacitance(Coss):
2.788nF
Input Capacitance(Ciss):
11.547nF
Pd - Power Dissipation:
456W
Gate Charge(Qg):
253nC@10V
Mfr. Part #:
SP85N01BGHTO
Package:
TOLL
Product Description
Product Overview
The SP85N01BGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high frequency circuits, as well as power management. The device is packaged in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N01BGHTO
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| V(BR)DSS | 85 | V | ||
| RDS(on)TYP | @10V | 1.3 | m | |
| ID | 350 | A | ||
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 85 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 350 | A |
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 234 | A |
| Pulsed Drain Current | IDM | 1400 | A | |
| Single Pulse Avalanche Energy | EAS | 2386 | mJ | |
| Power Dissipation (Tc=25) | PD | (Tc=25) | 456 | W |
| Thermal Resistance Junction-to-Case | RJC | 0.27 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 - 90 | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - - 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - - 0.1 | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 - 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - 1.3 1.6 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - 11547 - | pF |
| Output Capacitance | Coss | - 2788 - | ||
| Reverse Transfer Capacitance | Crss | - 87 - | ||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=130A | - 253 - | nC |
| Gate-Source Charge | Qgs | - 68 - | ||
| Gate-Drain Charge | Qg | - 63 - | ||
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=130A , RG = 1.6 | - 45 - | nS |
| Rise Time | tr | - 38 - | ||
| Turn-Off Delay Time | td(off) | - 118 - | ||
| Fall Time | tf | - 45 - | ||
| Source-Drain Diode Characteristics | ||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - - 350 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - 109 - | nS |
| Reverse Recovery Charge | Qrr | - 315 - | nC | |
| Package Information | ||||
| Package Type | TOLL | |||
| Order Information | Device | Package | Unit/Tape | |
| SP85N01BGHTO | TOLL | 2000 | ||
2506271720_Siliup-SP85N01BGHTO_C49257250.pdf
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