Power Electronics Silicon Carbide MOSFET Siliup SP52N120CTK 1200V with RoHS Compliance and Simple Driving Characteristics
Key Attributes
Model Number:
SP52N120CTK
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Input Capacitance(Ciss):
3.177nF
Output Capacitance(Coss):
142pF
Pd - Power Dissipation:
357W
Gate Charge(Qg):
139nC
Mfr. Part #:
SP52N120CTK
Package:
TO-247-4L
Product Description
Product Overview
The SP52N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant and suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High Voltage DC/DC Converters, and Switching Mode Power Supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC) MOSFET
- Certification: RoHS Compliant
- Package: TO-247-4L (1-Drain; 2-Source; 3-Kelvin Source; 4-Gate)
- Device Code: SP52N120CTK
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Units |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |
| On-Resistance (Typical) | RDS(on)TYP | @18V | 32 | m |
| Continuous Drain Current | ID | 52 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V |
| Gate-Source Voltage | VGSMAX | (Ta=25) | -10/+22 | V |
| Recommended Gate-Source Voltage | VGSop | (Ta=25) | -5/+18 | V |
| Continuous Drain Current | ID | (Tc=25) | 78 | A |
| Continuous Drain Current | ID | (Tc=100) | 52 | A |
| Pulsed Drain Current | IDM | 158 | A | |
| Single Pulse Avalanche Energy | EAS | 1 | 1150 | mJ |
| Power Dissipation | PD | (Tc=25) | 357 | W |
| Power Dissipation | PD | (Tc=100) | 238 | W |
| Thermal Resistance Junction-Case | RJC | 0.42 | /W | |
| Storage Temperature Range | TSTG | -55 to 175 | ||
| Operating Junction Temperature Range | TJ | -55 to 175 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 1200 | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | 1 (Typ.) | uA |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | 100 (Max.) | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V, VDS=0V, TJ=25 | 1 (Typ.) | nA |
| Gate-Source Leakage Current | IGSS | VGS=18V, VDS=0V, TJ=25 | 100 (Max.) | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=11.5mA, Tj=25 | 2.8 (Typ.) | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=11.5mA, Tj=25 | 4.0 (Max.) | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=11.5mA, Tj=175 | 2.3 (Typ.) | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=25 | 32 (Typ.) | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=25 | 40 (Max.) | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=175 | 52 (Typ.) | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=1000V, VGS=0V, f=100KHz | 3177 (Typ.) | pF |
| Output Capacitance | Coss | VDS=1000V, VGS=0V, f=100KHz | 142 (Typ.) | pF |
| Reverse Transfer Capacitance | Crss | VDS=1000V, VGS=0V, f=100KHz | 13 (Typ.) | pF |
| Total Gate Charge | Qg | VDS=800V, VGS=-5/+18V, ID=40A | 139 (Typ.) | nC |
| Gate-Source Charge | Qgs | VDS=800V, VGS=-5/+18V, ID=40A | 42 (Typ.) | nC |
| Gate-Drain Charge | Qgd | VDS=800V, VGS=-5/+18V, ID=40A | 47 (Typ.) | nC |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 18 (Typ.) | nS |
| Rise Time | tr | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 14 (Typ.) | nS |
| Turn-Off Delay Time | td(off) | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 29 (Typ.) | nS |
| Fall Time | tf | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 10 (Typ.) | nS |
| Turn-On Energy | Eon | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 223 (Typ.) | J |
| Turn-Off Energy | Eoff | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 90 (Typ.) | J |
| Total Switching Loss | Etot | VDS=800V, VGS=-5/+18V, ID=40A, RG=4.5 | 313 (Typ.) | J |
| Reverse Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=-5V, ISD=20A, TJ=25 | 4.7 (Typ.) | V |
| Diode Forward Voltage | VSD | VGS=-5V, ISD=20A, TJ=175 | 4.2 (Typ.) | V |
| Reverse Recovery Time | trr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 23 (Typ.) | nS |
| Reverse Recovery Charge | Qrr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 696 (Typ.) | nC |
| Peak Reverse Recovery Current | Irrm | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 43 (Typ.) | A |
| Package Information (TO-247-4L) | ||||
| Dimension | Symbol | Min. (mm) | Max. (mm) | Min. (in) |
| Dimension | Symbol | Min. (mm) | Max. (mm) | Max. (in) |
| A | A | 4.83 | 5.21 | 0.19 |
| A1 | A1 | 2.29 | 2.54 | 0.09 |
| A2 | A2 | 1.91 | 2.16 | 0.08 |
| b1 | b1 | 2.39 | 2.94 | 0.09 |
| b3 | b3 | 1.07 | 1.60 | 0.04 |
| b5 | b5 | 2.39 | 2.69 | 0.09 |
| c | c | 0.55 | 0.68 | 0.02 |
| D | D | 23.30 | 23.60 | 0.92 |
| D1 | D1 | 16.25 | 17.65 | 0.64 |
| D2 | D2 | 0.95 | 1.25 | 0.04 |
| E | E | 15.75 | 16.13 | 0.62 |
| E1 | E1 | 13.10 | 14.15 | 0.52 |
| E2 | E2 | 3.68 | 5.10 | 0.14 |
| E3 | E3 | 1.00 | 1.90 | 0.04 |
| E4 | E4 | 12.38 | 13.43 | 0.49 |
| e | e | 2.54 BSC | 0.1 BSC | |
| e1 | e1 | 5.08 BSC | 0.2 BSC | |
| L | L | 17.31 | 17.82 | 0.68 |
| L1 | L1 | 3.97 | 4.37 | 0.16 |
| L2 | L2 | 2.35 | 2.65 | 0.09 |
| P | P | 3.51 | 3.65 | 0.14 |
| Q | Q | 5.49 | 6.00 | 0.22 |
| S | S | 6.04 | 6.30 | 0.24 |
2504101957_Siliup-SP52N120CTK_C45351242.pdf
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