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quality Compact dual transistor ROHM FMG4AT148 offering 50 volts VCEO and 100 milliamps IC for SMT mounting factory
quality Compact dual transistor ROHM FMG4AT148 offering 50 volts VCEO and 100 milliamps IC for SMT mounting factory

Compact dual transistor ROHM FMG4AT148 offering 50 volts VCEO and 100 milliamps IC for SMT mounting

Key Attributes
Model Number: FMG4AT148
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
13kΩ
Number:
2 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
FMG4AT148
Package:
SC-74A(SOT-753)
Product Description

Product Overview

The EMG4 / UMG4N / FMG4A series are dual digital transistors in compact SMT packages, designed to reduce mounting cost and area. Each device integrates two DTC114T chips, making them suitable for applications such as inverters, interfaces, and drivers. These transistors offer a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA.

Product Attributes

  • Brand: ROHM
  • RoHS: Yes

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking Power Dissipation (mW/Total) Collector-Emitter Voltage (VCEO) (V) Collector Current (IC) (mA) Input Resistance (R1) (k) Transition Frequency (fT) (MHz)
EMG4 SOT-553 (EMT5) 1616 T2R 180 8 8000 G4 150*1*2 50 100 10 250
UMG4N SOT-353 (UMT5) 2021 TR 180 8 3000 G4 150*1*2 50 100 10 250
FMG4A SOT-25 (SMT5) 2928 T148 180 8 3000 G4 300*1*3 50 100 10 250

*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA - - 300 mV
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 7 10 13 k
Transition frequency fT*4 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

2410231749_ROHM-FMG4AT148_C17660463.pdf

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