150V P Channel MOSFET Siliup SP015P80GTH Designed for Power Switching and DC DC Converter Efficiency
Product Overview
The SP015P80GTH is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015P80GTH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | -150V | |||||
| RDS(on) | @-10V | 85m | ||||
| RDS(on) | @-4.5V | 94m | ||||
| ID | -30A | |||||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -30 | A | |||
| Continuous Drain Current (Tc=100) | ID | -20 | A | |||
| Pulsed Drain Current | IDM | -120 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 380 | mJ | |||
| Power Dissipation (Tc=25) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -150 | V | ||
| Drain Cut-Off Current | IDSS | VDS= -120V , VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1 | -1.9 | -2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS= -10V , ID= -30A | 85 | 106 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS= -4.5V , ID= -20A | 94 | 125 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS= -75V,VGS=0V,f=1MHZ | 3275 | pF | ||
| Output Capacitance | Coss | 137 | ||||
| Reverse Transfer Capacitance | Crss | 14 | ||||
| Total Gate Charge | Qg | VDS= -75V , VGS= -10V , ID= -15A | 92 | nC | ||
| Gate-Source Charge | Qgs | 9 | ||||
| Gate-Drain Charge | Qg | 19 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD= -75V, VGS=-10V , RG=1.6, ID= -15A | 68 | nS | ||
| Rise Time | tr | 18 | ||||
| Turn-Off Delay Time | td(off) | 70 | ||||
| Fall Time | tf | 35 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -30 | A | |||
| Reverse Recovery Time | Trr | IS= -15A, di/dt=100A/us, TJ=25 | 350 | nS | ||
| Reverse Recovery Charge | Qrr | 86 | nC | |||
Note: 1. The test condition is VDD=-50V,VGS=-10V,L=0.5mH,RG=25
Package Information
TO-252 Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2504101957_Siliup-SP015P80GTH_C42372357.pdf
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