150V P Channel MOSFET Siliup SP015P80GTH Designed for Power Switching and DC DC Converter Efficiency

Key Attributes
Model Number: SP015P80GTH
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V;94mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 P-Channel
Output Capacitance(Coss):
137pF
Pd - Power Dissipation:
130W
Input Capacitance(Ciss):
3.275nF
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
SP015P80GTH
Package:
TO-252
Product Description

Product Overview

The SP015P80GTH is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP015P80GTH
  • Package: TO-252

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS -150V
RDS(on) @-10V 85m
RDS(on) @-4.5V 94m
ID -30A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -150 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID -30 A
Continuous Drain Current (Tc=100) ID -20 A
Pulsed Drain Current IDM -120 A
Single Pulse Avalanche Energy1 EAS 380 mJ
Power Dissipation (Tc=25) PD 130 W
Thermal Resistance Junction-to-Case RJC 0.96 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID= -250uA -150 V
Drain Cut-Off Current IDSS VDS= -120V , VGS=0V -1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID = -250uA -1 -1.9 -2.5 V
Drain-Source ON Resistance RDS(ON) VGS= -10V , ID= -30A 85 106 m
Drain-Source ON Resistance RDS(ON) VGS= -4.5V , ID= -20A 94 125 m
Dynamic Characteristics
Input Capacitance Ciss VDS= -75V,VGS=0V,f=1MHZ 3275 pF
Output Capacitance Coss 137
Reverse Transfer Capacitance Crss 14
Total Gate Charge Qg VDS= -75V , VGS= -10V , ID= -15A 92 nC
Gate-Source Charge Qgs 9
Gate-Drain Charge Qg 19
Switching Characteristics
Turn-On Delay Time td(on) VDD= -75V, VGS=-10V , RG=1.6, ID= -15A 68 nS
Rise Time tr 18
Turn-Off Delay Time td(off) 70
Fall Time tf 35
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V -1.2 V
Maximum Body-Diode Continuous Current IS -30 A
Reverse Recovery Time Trr IS= -15A, di/dt=100A/us, TJ=25 350 nS
Reverse Recovery Charge Qrr 86 nC

Note: 1. The test condition is VDD=-50V,VGS=-10V,L=0.5mH,RG=25

Package Information

TO-252 Package Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP015P80GTH_C42372357.pdf
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