High Frequency and PWM Applications Using Siliup SP50MF65TO 650V Super Junction MOSFET with Low RDSon
Key Attributes
Model Number:
SP50MF65TO
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
50A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Pd - Power Dissipation:
305W
Input Capacitance(Ciss):
4.24nF
Output Capacitance(Coss):
64pF
Gate Charge(Qg):
81nC@10V
Mfr. Part #:
SP50MF65TO
Package:
TOLL-8L
Product Description
Product Overview
The SP50MF65TO is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP50MF65TO
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 50 | A | |||
| Continuous Drain Current (Tc=100) | ID | 34 | A | |||
| Pulsed Drain Current | IDM | 200 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 210 | mJ | |||
| Power Dissipation (Tc=25) | PD | 305 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.41 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS =520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 35A | - | 40 | 50 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=100kHz | - | 4240 | - | pF |
| Output Capacitance | Coss | - | 64 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 45 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=200V , VGS=10V , ID=40A | - | 81 | - | nC |
| Gate-Source Charge | Qgs | - | 26 | - | ||
| Gate-Drain Charge | Qgd | - | 24 | - | ||
| Turn-On Delay Time | Td(on) | VGS = 10V, VDS = 200V, ID=40A , RG = 20 | - | 34 | - | nS |
| Rise Time | Tr | - | 11 | - | ||
| Turn-Off Delay Time | Td(off) | - | 124 | - | ||
| Fall Time | Tf | - | 5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Reverse Recovery Time | trr | IS=40A,di/dt=100A/us, Tj=25 | - | 161 | - | nS |
| Reverse Recovery Charge | Qrr | - | 1.1 | - | uC | |
Note: 1. The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP50MF65TO | TOLL | 2000 |
TOLL Package Information
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. |
|---|---|---|---|---|
| A | 2.20 | 2.30 | 2.40 | |
| b | 0.65 | 0.75 | 0.85 | |
| C | 0.508 | REF | ||
| D | 10.25 | 10.40 | 10.55 | |
| D1 | 2.85 | 3.00 | 3.15 | |
| E | 9.75 | 9.90 | 10.05 | |
| E1 | 9.65 | 9.80 | 9.95 | |
| E2 | 8.95 | 9.10 | 9.25 | |
| E3 | 7.25 | 7.40 | 7.55 | |
| e | 1.20 | BSC | ||
| F | 1.05 | 1.20 | 1.35 | |
| H | 11.55 | 11.70 | 11.85 | |
| H1 | 6.03 | 6.18 | 6.33 | |
| H2 | 6.85 | 7.00 | 7.15 | |
| H3 | 3.00 | BSC | ||
| L | 1.55 | 1.70 | 1.85 | |
| L1 | 0.55 | 0.7 | 0.85 | |
| L2 | 0.45 | 0.6 | 0.75 | |
| M | 0.08 | REF. | ||
| 8 | 10 | 12 | ||
| K | 4.25 | 4.40 | 4.55 |
2508111740_Siliup-SP50MF65TO_C50199167.pdf
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