Digital transistor ROHM DTC144TKAT146 with built in bias resistors and parasitic effect elimination
Key Attributes
Model Number:
DTC144TKAT146
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
47kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC144TKAT146
Package:
SC-59
Product Description
Product Overview
The DTC144T series are NPN digital transistors featuring built-in bias resistors, simplifying inverter circuit configurations without external components. These transistors utilize thin-film resistors with complete isolation for negative input biasing and eliminate parasitic effects. They are designed for ease of use, requiring only on/off condition settings for operation. Complementary PNP types and complex transistor options are available. These devices are Lead-Free and RoHS Compliant.
Product Attributes
- Brand: ROHM
- Certifications: Lead Free/RoHS Compliant
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTC144TM | VMT3 | 1212 | T2L | 180 | 8 | 8000 | 06 |
| DTC144TE | EMT3 | 1616 | TL | 180 | 8 | 3000 | 06 |
| DTC144TUA | UMT3 | 2021 | T106 | 180 | 8 | 3000 | 06 |
| DTC144TKA | SMT3 | 2928 | T146 | 180 | 8 | 3000 | 06 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC | 100 | mA | |||
| Power dissipation (DTC144TM) | PD*1 | Each terminal mounted on a reference footprint | 150 | mW | ||
| Power dissipation (DTC144TE) | PD*1 | Each terminal mounted on a reference footprint | 150 | mW | ||
| Power dissipation (DTC144TUA) | PD*1 | Each terminal mounted on a reference footprint | 200 | mW | ||
| Power dissipation (DTC144TKA) | PD*1 | Each terminal mounted on a reference footprint | 200 | mW | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 0.5 | A |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 0.5 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC / IB = 5mA / 0.5mA | - | - | 0.3 | V |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | 32.9 | 47 | 61.1 | k | |
| Transition frequency | fT*2 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Applications
- Switching circuit
- Inverter circuit
- Interface circuit
- Driver circuit
2007151836_ROHM-DTC144TKAT146_C703617.pdf
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