Power MOSFET 120V N Channel Siliup SP012N09GHTH with Low On Resistance and Avalanche Energy Protection
Key Attributes
Model Number:
SP012N09GHTH
Product Custom Attributes
Drain To Source Voltage:
120V
Configuration:
-
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
280pF
Pd - Power Dissipation:
96W
Input Capacitance(Ciss):
3.045nF
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
SP012N09GHTH
Package:
TO-252
Product Description
Product Overview
The SP012N09GHTH is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for power switching applications, battery management, and uninterruptible power supply systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N09GHTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 120 | V |
| RDS(on)TYP | - | @10V | - | 9.0 | - | m |
| ID | - | - | - | - | 65 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 120 | V |
| Gate-Source Voltage | VGS | - | - | ±20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 65 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 45 | A |
| Pulsed Drain Current | IDM | - | - | - | 260 | A |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 272 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 96 | W |
| Thermal Resistance Junction-to-Case | RθJC | - | - | 1.3 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=120 V, VGS=0 V | - | - | 1 | μA |
| Gate Leakage Current | IGSS | VGS=±20 V | - | - | ±0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 μA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=30 A | - | 9 | 12 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =60V, VGS = 0V, f = 1.0MHz | - | 3045 | - | pF |
| Output Capacitance | Coss | - | - | 280 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 22 | - | pF |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=30A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | - | 21 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 14 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 20V, VDS =60V, ID=50A RG = 4.7Ω | - | 16 | - | nS |
| Rise Time | tr | - | - | 9.5 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 35 | - | nS |
| Fall Time | tf | - | - | 8.4 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25°C | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 65 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/μs, TJ=25°C | - | 80 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 156 | - | nC |
| Package Information | ||||||
| Package Type | - | - | - | - | TO-252 | - |
| Pin Configuration | - | (1:G 2:D 3:S) | - | - | - | - |
| Order Information (Unit/Tube) | - | - | - | - | 2500 | Unit/Tube |
| Marking | - | 012N09GH : Product code : Week code | - | - | - | - |
Note 1: EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25Ω.
2504101957_Siliup-SP012N09GHTH_C42403245.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
