Shenzhen Haoruijia Elec RS2035H8E series thyristor for solid state relays and dimming control applications
Key Attributes
Model Number:
RS2035H8E
Product Custom Attributes
Holding Current (Ih):
75mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
20A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
200A
Gate Trigger Voltage (Vgt):
200mV
Mfr. Part #:
RS2035H8E
Package:
TO-263
Product Description
Product Overview
The RS2035H8E series are high-reliability thyristors utilizing advanced glass passivation technology, offering low on-state voltage drop and stable performance. They are primarily used in dimming, temperature control, and voltage regulation circuits. Applications include control circuits for home appliances such as microwave ovens, washing machines, electric fans, and water dispensers, as well as in AC phase control, choppers, inverters, frequency converters, and solid-state relays.
Product Attributes
- Brand: (Haoruijia)
- Origin: Shenzhen
- Model: RS2035H8E-1/-3, RS2035H8E-2/-3, RS2035H8E-3/-3
- Contact: TEL:+86-0755-89519740, www.sika-wen.com
Technical Specifications
| Name | Symbol | Specification Value | Unit | Test Conditions | Quadrant | Type |
| Repetitive Peak Off-State Voltage | VDRM/VRRM | 600/800 | V | -1/-3 | ||
| RMS On-State Current | IT(RMS) | 20 | A | Tc=105 | -1/-3 | |
| Surge Current | ITSM | 200 | A | Sinusoidal 60Hz t=8.3ms | -1/-3 | |
| I2t | I2t | 200 | A2s | tp=10ms | -1/-3 | |
| Critical Rate of Rise of On-State Current | dI/dt | 100 | A/s | IG=500mA dIG/dt=1A/s F=50Hz | -1/-3 | |
| Peak Gate Current | IGM | 4 | A | Tj=125 tp=20s | -1/-3 | |
| Peak Gate Voltage | VGM | 16 | V | Tj=125 | -1/-3 | |
| Peak Gate Power | PGM | 5 | W | Tj=125 | -1/-3 | |
| Average Gate Power | PG(AV) | 1 | W | Tj=125 | -1/-3 | |
| Junction Temperature | Tj | 125 | -1/-3 | |||
| Storage Temperature | Tstg | -40~150 | -1/-3 | |||
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 10 | A | VDRM=VRRM Tj=25 | CW | -1/-3 |
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 3 | mA | VDRM=VRRM Tj=125 | CW | -1/-3 |
| On-State Voltage | VTM | MAX 1.7 | V | IT=28A tp=380s | CW | -1/-3 |
| Holding Current | IH | MAX 75 | mA | IT=500mA | CW | -1/-3 |
| Latching Current | IL | MAX 50 | mA | IG= 1.2IGT | - | -1/-3 |
| Latching Current | IL | 90 | mA | IG= 1.2IGT | -1/-3 | |
| Gate Trigger Current | IGT | MAX 50 | mA | VD=12V RL=30 | -- | -1/-3 |
| Gate Trigger Voltage | VGT | 1.5 | V | -1/-3 | ||
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | VD=VDRM RL=3.3K Tj=125 | -1/-3 | |
| Critical Rate of Rise of Off-State Voltage | dV/dt | MIN 500 | V/s | VDM=67%VDRM Gate open Tj=125 | -1/-3 | |
| Commutation Voltage Critical Rate of Rise | (dV/dt)C | MIN 18 | V/s | (dI/dt)C=20A/ms Tj=125 | -1/-3 | |
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 10 | A | VDRM=VRRM Tj=25 | B | -2/-3 |
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 3 | mA | VDRM=VRRM Tj=125 | B | -2/-3 |
| On-State Voltage | VTM | MAX 1.7 | V | IT=28A tp=380s | B | -2/-3 |
| Holding Current | IH | MAX 75 | mA | IT=500mA | B | -2/-3 |
| Latching Current | IL | MAX 50 | mA | IG= 1.2IGT | -- | -2/-3 |
| Latching Current | IL | 90 | mA | IG= 1.2IGT | -2/-3 | |
| Gate Trigger Current | IGT | MAX 50 | mA | VD=12V RL=30 | ALL | -2/-3 |
| Gate Trigger Voltage | VGT | 1.5 | V | -2/-3 | ||
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | VD=VDRM RL=3.3K Tj=125 | -2/-3 | |
| Critical Rate of Rise of Off-State Voltage | dV/dt | MIN 500 | V/s | VDM=67%VDRM Gate open Tj=125 | -2/-3 | |
| Commutation Voltage Critical Rate of Rise | (dV/dt)C | MIN 18 | V/s | (dI/dt)C=20A/ms Tj=125 | -2/-3 | |
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 10 | A | VDRM=VRRM Tj=25 | B | -3/-3 |
| Repetitive Peak Blocking Current | IDRM/IRRM | MAX 3 | mA | VDRM=VRRM Tj=125 | B | -3/-3 |
| On-State Voltage | VTM | MAX 1.7 | V | IT=28A tp=380s | B | -3/-3 |
| Holding Current | IH | MAX 75 | mA | IT=500mA | B | -3/-3 |
| Latching Current | IL | MAX 50 | mA | IG= 1.2IGT | -- | -3/-3 |
| Latching Current | IL | 90 | mA | IG= 1.2IGT | -3/-3 | |
| Gate Trigger Current | IGT | MAX 50 | mA | VD=12V RL=30 | ALL | -3/-3 |
| Gate Trigger Voltage | VGT | 1.5 | V | -3/-3 | ||
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | VD=VDRM RL=3.3K Tj=125 | -3/-3 | |
| Critical Rate of Rise of Off-State Voltage | dV/dt | MIN 500 | V/s | VDM=67%VDRM Gate open Tj=125 | -3/-3 | |
| Commutation Voltage Critical Rate of Rise | (dV/dt)C | MIN 18 | V/s | (dI/dt)C=20A/ms Tj=125 | -3/-3 |
Product Packaging and Storage
Packaging: TO-263 package with 50/strip, 1000/box, 5000/carton. Shipping via express delivery.
Storage Conditions: Temperature: 10-30, Humidity: <60%. Shelf life: One year. Storage status: Warehouse.
2410121243_Shenzhen-Haoruijia-Elec--RS2035H8E_C2931291.pdf
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