Integrated bias resistor PNP digital transistor ROHM DTA123EKAT146 suitable for inverter interface and driver circuit
Product Overview
The DTA123E series are PNP digital transistors with built-in biasing resistors, designed for simplified inverter circuit configurations. These transistors feature integrated R1 and R2 resistors (2.2k each), eliminating the need for external input resistors and streamlining circuit design. Ideal for applications requiring easy on/off condition setting, they are suitable for use as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC123E series.
Product Attributes
- Brand: ROHM
- Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTA123EM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 12 |
| DTA123EE | SOT-416 (EMT3) | 1616 | TL | 180 | 8 | 3000 | 12 |
| DTA123EUA | SOT-323 (UMT3) | 2021 | T106 | 180 | 8 | 3000 | 12 |
| DTA123EKA | SOT-346 (SMT3) | 2928 | T146 | 180 | 8 | 3000 | 12 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Supply voltage | VCC | -50 | V | |||
| Input voltage | VIN | -12 | to | 10 | V | |
| Output current | IO | -100 | mA | |||
| Collector current | IC(MAX)*1 | -100 | mA | |||
| Power dissipation (DTA123EM) | PD*2 | 150 | mW | |||
| Power dissipation (DTA123EE) | PD*2 | 150 | mW | |||
| Power dissipation (DTA123EUA) | PD*2 | 200 | mW | |||
| Power dissipation (DTA123EKA) | PD*2 | 200 | mW | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | to | +150 | ||
| Input voltage (VI(off)) | VCC = -5V, IO = -100A | -0.5 | V | |||
| Input voltage (VI(on)) | VO = -0.3V, IO = -20mA | -3.0 | V | |||
| Output voltage (VO(on)) | IO = -10mA, II = -0.5mA | -100 | -300 | mV | ||
| Input current | II | VI = -5V | -3.8 | mA | ||
| Output current (IO(off)) | VCC = -50V, VI = 0V | -500 | nA | |||
| DC current gain | GI | VO = -5V, IO = -20mA | 20 | - | ||
| Input resistance | R1 | 1.54 | 2.2 | 2.86 | k | |
| Resistance ratio | R2/R1 | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | 250 | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
1810122120_ROHM-DTA123EKAT146_C184717.pdf
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