Integrated bias resistor PNP digital transistor ROHM DTA123EKAT146 suitable for inverter interface and driver circuit

Key Attributes
Model Number: DTA123EKAT146
Product Custom Attributes
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
2.86kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA123EKAT146
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The DTA123E series are PNP digital transistors with built-in biasing resistors, designed for simplified inverter circuit configurations. These transistors feature integrated R1 and R2 resistors (2.2k each), eliminating the need for external input resistors and streamlining circuit design. Ideal for applications requiring easy on/off condition setting, they are suitable for use as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC123E series.

Product Attributes

  • Brand: ROHM
  • Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTA123EM SOT-723 (VMT3) 1212 T2L 180 8 8000 12
DTA123EE SOT-416 (EMT3) 1616 TL 180 8 3000 12
DTA123EUA SOT-323 (UMT3) 2021 T106 180 8 3000 12
DTA123EKA SOT-346 (SMT3) 2928 T146 180 8 3000 12
Parameter Symbol Conditions Min. Typ. Max. Unit
Supply voltage VCC -50 V
Input voltage VIN -12 to 10 V
Output current IO -100 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation (DTA123EM) PD*2 150 mW
Power dissipation (DTA123EE) PD*2 150 mW
Power dissipation (DTA123EUA) PD*2 200 mW
Power dissipation (DTA123EKA) PD*2 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Input voltage (VI(off)) VCC = -5V, IO = -100A -0.5 V
Input voltage (VI(on)) VO = -0.3V, IO = -20mA -3.0 V
Output voltage (VO(on)) IO = -10mA, II = -0.5mA -100 -300 mV
Input current II VI = -5V -3.8 mA
Output current (IO(off)) VCC = -50V, VI = 0V -500 nA
DC current gain GI VO = -5V, IO = -20mA 20 -
Input resistance R1 1.54 2.2 2.86 k
Resistance ratio R2/R1 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz 250 MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.


1810122120_ROHM-DTA123EKAT146_C184717.pdf

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