Shenzhen ruichips Semicon RU7080L Power MOSFET Featuring Ultra Low On Resistance and Application
Key Attributes
Model Number:
RU7080L
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
80A
RDS(on):
8mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
930pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.45nF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
RU7080L
Package:
TO-252
Product Description
RU7080L N-Channel Advanced Power MOSFET
The RU7080L is an N-Channel Advanced Power MOSFET featuring a super high dense cell design and ultra-low on-resistance. It is 100% avalanche tested and available in lead-free and green devices (RoHS compliant). This MOSFET is designed for applications requiring high efficiency and performance.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Origin: CHINA
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 70 | V | |||
| Gate-Source Voltage | VGSS | 25 | V | |||
| Maximum Junction Temperature | TJ | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Diode Continuous Forward Current | IS | TC=25C | 80 | A | ||
| Pulsed Drain Current | IDP | TC=25C | 320 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=25C | 80 | A | ||
| TC=100C | 56 | A | ||||
| Maximum Power Dissipation | PD | TC=25C | 125 | W | ||
| TC=100C | 62.5 | W | ||||
| Thermal Resistance-Junction to Case | RJC | 1.2 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | Mounted on Large Heat Sink | 100 | C/W | ||
| Avalanche Energy, Single Pulsed | EAS | 225 | mJ | |||
| Electrical Characteristics (TC=25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 70 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=70V, VGS=0V | 1 | A | ||
| TJ=125C | 30 | A | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=40A | 5.7 | 8 | m | |
| Diode Forward Voltage | VSD | ISD=40A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time | trr | ISD=40A, dlSD/dt=100A/s | 45 | ns | ||
| Reverse Recovery Charge | Qrr | 93 | nC | |||
| Gate Resistance | RG | 1.5 | ||||
| Input Capacitance | Ciss | VGS=0V,VDS=35V,F=1MHz | 3450 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=35V, Frequency=1.0MHz | 930 | pF | ||
| Reverse Transfer Capacitance | Crss | 230 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=35V, IDS=40A, VGEN=10V,RG=4.7 | 40 | ns | ||
| Turn-on Rise Time | tr | 132 | ns | |||
| Turn-off Delay Time | td(OFF) | VDS=56V, VGS=10V, IDS=40A | 180 | ns | ||
| Turn-off Fall Time | tf | 90 | ns | |||
| Total Gate Charge | Qg | 67 | nC | |||
| Gate-Source Charge | Qgs | 14 | nC | |||
| Gate-Drain Charge | Qgd | 22 | nC | |||
2410122018_Shenzhen-ruichips-Semicon-RU7080L_C3008525.pdf
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