Dual N Channel MOSFET Siliup SP8810DTS 20V 7A Drain Current SOT23 6L Package with 2KV ESD Protection
Key Attributes
Model Number:
SP8810DTS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
16mΩ@4.5V;20mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
2 N-Channel
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
940pF
Gate Charge(Qg):
9.6nC@4.5V
Mfr. Part #:
SP8810DTS
Package:
SOT-23-6L
Product Description
Product Overview
The SP8810DTS is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities, ESD protection up to 2KV, and is available in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP8810DTS
- Technology: Dual N-Channel MOSFET
- Package: SOT-23-6L
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 16 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | 20 | m | ||
| Continuous Drain Current | ID | 7 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 20 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 12 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 7 | A | ||
| Pulse Drain Current | IDM | Tested | 28 | A | ||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 83.3 | C/W | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.65 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =7A | - | 16 | 22 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=6.5A | - | 20 | 26 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 131 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 109 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=5A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=4.5V , ID=5A | - | 3.9 | - | |
| Gate-Drain Charge | Qg | VDS=15V , VGS=4.5V , ID=5A | - | 3.4 | - | |
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=1.5 , ID=5A | - | 4.2 | - | nS |
| Turn-On Rise Time | tr | VDD=15V VGS=10V , RG=1.5 , ID=5A | - | 8.2 | - | |
| Turn-Off Delay Time | td(off) | VDD=15V VGS=10V , RG=1.5 , ID=5A | - | 31 | - | |
| Turn-Off Fall Time | tf | VDD=15V VGS=10V , RG=1.5 , ID=5A | - | 4 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23-6L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E | 1.500 | 1.700 | 0.059 | 0.067 |
| E1 | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 | |
2504101957_Siliup-SP8810DTS_C41355228.pdf
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