Dual transistor ROHM UMG4NTR designed to minimize mounting cost and board space in driver circuits
Key Attributes
Model Number:
UMG4NTR
Product Custom Attributes
Input Resistor:
10kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMG4NTR
Package:
SOT-353
Product Description
Product Overview
The EMG4 / UMG4N / FMG4A series are dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two DTC114T chips within a single SOT-553, SOT-353, or SOT-25 package, offering significant advantages in reduced mounting cost and occupied board area. They provide a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA, with a typical input resistance (R1) of 10k.
Product Attributes
- Brand: ROHM
- Product Family: EMG4 / UMG4N / FMG4A
- Package Types: SOT-553 (EMT5), SOT-353 (UMT5), SOT-25 (SMT5)
Technical Specifications
| Part Number | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMG4 | SOT-553 (EMT5) | 1616 | T2R | 180 | 8 | 8000 | G4 |
| UMG4N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | G4 |
| FMG4A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | G4 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC | 100 | mA | |||
| Power dissipation (EMG4) | PD*1*2 | 150 | mW/Total | |||
| Power dissipation (UMG4N) | PD*1*2 | 150 | mW/Total | |||
| Power dissipation (FMG4A) | PD*1*3 | 300 | mW/Total | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 10mA, IB = 1mA | - | - | 300 | mV |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 7 | 13 | k | |
| Transition frequency | fT*4 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.
2206011716_ROHM-UMG4NTR_C3020209.pdf
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