Power Switching MOSFET Siliup SP30N02AGNK 30V N Channel Device with Low RDSon and High Avalanche Energy Rating
Key Attributes
Model Number:
SP30N02AGNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
1.9mΩ@10V;3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
770pF
Input Capacitance(Ciss):
2.19nF
Pd - Power Dissipation:
85W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SP30N02AGNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP30N02AGNK is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supply systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30N02AGNK
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(on) TYP | @10V | 1.9 | m | |||
| RDS(on) TYP | @4.5V | 3 | m | |||
| ID | 100 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 100 | A | ||
| Continuous Drain Current | ID | (TC=100) | 66.6 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | (TC=25) | 85 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.47 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.9 | 2.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 3.0 | 4.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 2190 | - | pF |
| Output Capacitance | Coss | - | 770 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 16 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 36 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | ||
| Gate-Drain Charge | Qgd | - | 5.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=1.6, ID=20A | - | 7 | - | nS |
| Rise Time | tr | - | 4.5 | - | ||
| Turn-Off Delay Time | td(off) | - | 34 | - | ||
| Fall Time | tf | - | 8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 43 | - | nS |
| Reverse Recovery Charge | Qrr | - | 16 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30N02AGNK | PDFN5X6-8L | 5000 | ||||
2504101957_Siliup-SP30N02AGNK_C22466702.pdf
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